S
Suresh Perumal
Researcher at SRM University
Publications - 48
Citations - 1557
Suresh Perumal is an academic researcher from SRM University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 15, co-authored 31 publications receiving 1036 citations. Previous affiliations of Suresh Perumal include Centre national de la recherche scientifique & Indian Institute of Science.
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High Thermoelectric Performance and Enhanced Mechanical Stability of p-type Ge1–xSbxTe
TL;DR: In this article, a Pb-free p-type Ge0.9Sb0.1Te sample shows mechanical stability (Vickers microhardness) of ∼206 Hv.
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The origin of low thermal conductivity in Sn1−xSbxTe: phonon scattering via layered intergrowth nanostructures
TL;DR: In this article, the formation of synthetic nanostructures by matrix encapsulation is one of the important strategies for thermal conductivity reduction through phonon scattering, and the reduction of lattice thermal conductivities near the theoretical minimum limit, κmin, in SnTe via spontaneous formation of nanodomains of the Sb-rich layered intergrowth SnmSb2nTe3n+m compounds.
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High performance thermoelectric materials and devices based on GeTe
TL;DR: In this article, a review of the properties of GeTe-rich alloys is presented, including the crystal structure, nano-structure, phase transition, electronic structure, and thermoelectric properties.
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Realization of High Thermoelectric Figure of Merit in GeTe by Complementary Co-doping of Bi and In
Suresh Perumal,Manisha Samanta,Tanmoy Ghosh,U. Sandhya Shenoy,Anil Bohra,Shovit Bhattacharya,Ajay Singh,Umesh V. Waghmare,Kanishka Biswas +8 more
TL;DR: In this paper, the authors reported a high zT of ∼2.1 at 723 K in In and Bi co-doped GeTe along with an extremely high TE conversion efficiency of ∼12.3% in a single-leg thermoelectric generator for the temperature difference of 445 K.
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Reduction of thermal conductivity through nanostructuring enhances the thermoelectric figure of merit in Ge1−xBixTe
TL;DR: In this paper, a promising thermoelectric figure of merit, zT of ∼1.3 at 725 K was obtained in high quality crystalline ingots of Ge1−xBixTe.