U
Umesh V. Waghmare
Researcher at Jawaharlal Nehru Centre for Advanced Scientific Research
Publications - 452
Citations - 32377
Umesh V. Waghmare is an academic researcher from Jawaharlal Nehru Centre for Advanced Scientific Research. The author has contributed to research in topics: Density functional theory & Phonon. The author has an hindex of 67, co-authored 429 publications receiving 27856 citations. Previous affiliations of Umesh V. Waghmare include University of California, Santa Barbara & African Institute of Science and Technology.
Papers
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Journal ArticleDOI
Epitaxial BiFeO3 multiferroic thin film heterostructures.
Jian Wang,Jeffrey B. Neaton,Haimei Zheng,Valanoor Nagarajan,Satishchandra Ogale,B. T. Liu,Dwight Viehland,V. Vaithyanathan,Darrell G. Schlom,Umesh V. Waghmare,Nicola A. Spaldin,Karin M. Rabe,Manfred Wuttig,Ramamoorthy Ramesh +13 more
TL;DR: Enhanced polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das,Simone Pisana,Biswanath Chakraborty,S. Piscanec,Srijan Kumar Saha,Umesh V. Waghmare,Kostya S. Novoselov,H. R. Krishnamurthy,Andre K. Geim,Andrea C. Ferrari,A. K. Sood +10 more
TL;DR: This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
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Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene
Leela S. Panchakarla,Kota S. Subrahmanyam,Srijan Kumar Saha,A. Govindaraj,H. R. Krishnamurthy,Umesh V. Waghmare,C. N. R. Rao +6 more
TL;DR: In this paper, Boron and nitrogen-doped graphenes are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres using a combination of experiment and theories based on first principles.
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Sensing behavior of atomically thin-layered MoS2 transistors
Dattatray J. Late,Yi Kai Huang,B. T. Liu,Jagaran Acharya,Jagaran Acharya,Sharmila N. Shirodkar,Jiajun Luo,Aiming Yan,Daniel Charles,Umesh V. Waghmare,Vinayak P. Dravid,C. N. R. Rao +11 more
TL;DR: The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light, and ab initio DFT calculations show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.
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First-principles study of spontaneous polarization in multiferroic Bi Fe O 3
TL;DR: In this paper, the ground-state structural and electronic properties of ferroelectric are calculated using density functional theory within the local spin-density approximation (LSDA) and the $\mathrm{LSDA}+U$ method.