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Sven Ulrich

Researcher at Karlsruhe Institute of Technology

Publications -  134
Citations -  2589

Sven Ulrich is an academic researcher from Karlsruhe Institute of Technology. The author has contributed to research in topics: Thin film & Sputter deposition. The author has an hindex of 26, co-authored 124 publications receiving 2191 citations. Previous affiliations of Sven Ulrich include RWTH Aachen University.

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Deposition, characterization and high-temperature steam oxidation behavior of single-phase Ti2AlC-coated Zircaloy-4

TL;DR: In this paper, the authors investigated the performance of single-phase and dense Ti 2 AlC/TiC coatings with or without a 500-nm diffusion barrier on Zircaloy-4 by annealing of nanoscale multilayer stacks between 800 and 1200°C in high-temperature steam.
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XPS investigations of thick, oxygen-containing cubic boron nitride coatings

TL;DR: In this article, the atomic bonding structure relating in particular to the incorporated oxygen within such a thick c-BN:O coating using X-ray photoelectron spectroscopy (XPS).
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Combinatorial approach to the growth of α-(Al1 − x,Crx)2O3 solid solution strengthened thin films by reactive r.f. magnetron sputtering

TL;DR: In this paper, a combinatorial experimental approach was chosen to describe the growth and microstructure evolution of Al-Cr-O thin films by means of reactive r.f. magnetron sputtering.
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Multifunctional nanolaminated PVD coatings in the system Ti–Al–N–C by combination of metastable fcc phases and nanocomposite microstructures

TL;DR: In this paper, the authors present a concept of advanced nanolaminated PVD coatings combining the advantages of both the concepts of carbon-based nanocomposite coatings and those of multilayer coatings.
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Parameter spaces for the nucleation and the subsequent growth of cubic boron nitride films

TL;DR: In this article, it was shown that the growth depends in a similar way as the nucleation on the (interdependent) ion bombardment parameters but no longer on temperature, and that the boundary of the c-BN regions are different for nucleation and growth.