T
T. A. Baart
Researcher at Royal Dutch Shell
Publications - 23
Citations - 843
T. A. Baart is an academic researcher from Royal Dutch Shell. The author has contributed to research in topics: Quantum dot & Qubit. The author has an hindex of 12, co-authored 20 publications receiving 717 citations. Previous affiliations of T. A. Baart include Kavli Institute of Nanoscience & Delft University of Technology.
Papers
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Journal ArticleDOI
Single-spin CCD
T. A. Baart,M. Shafiei,Takafumi Fujita,Christian Reichl,Werner Wegscheider,Lieven M. K. Vandersypen +5 more
TL;DR: This work demonstrates the manipulation, transport and readout of individual electron spins in a linear array of three semiconductor quantum dots and shows that shuttling an electron back and forth in the array hundreds of times, covering a cumulative distance of 80 μm, has negligible influence on its spin projection.
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Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices
Augustinus Stijn M Goossens,Stefanie C.M. Driessen,T. A. Baart,Kenji Watanabe,Takashi Taniguchi,Lieven M. K. Vandersypen +5 more
TL;DR: The fabrication and measurement of nanoscale devices that permit electrostatic confinement in bilayer graphene on a substrate such that constrictions and islands can be electrostatically induced are reported.
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Coherent shuttle of electron-spin states
TL;DR: In this article, the authors demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array, starting with two electrons in a spin-singlet state in the first dot, they shuttle one electron over to either the second, third, or fourth dot.
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Coherent spin-exchange via a quantum mediator
TL;DR: This work uses a linear triple-quantum-dot array to demonstrate a coherent time evolution of two interacting distant spins via a quantum mediator, which may provide a new route for scaling up spin qubit circuits using quantum dots, and aid in the simulation of materials and molecules with non-nearest-neighbour couplings.
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Gate defined zero- and one-dimensional confinement in bilayer graphene
Augustinus,M. Goossens,Stefanie C.M. Driessen,T. A. Baart,Kenji Watanabe,Takashi Taniguchi,Lieven M. K. Vandersypen +6 more
TL;DR: In this paper, the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics is described.