T
T. A. Richard
Researcher at University of Illinois at Urbana–Champaign
Publications - 17
Citations - 833
T. A. Richard is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Quantum well & Laser. The author has an hindex of 11, co-authored 17 publications receiving 827 citations.
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Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
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Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors
TL;DR: In this paper, a 300K continuous and pulsed photopumped laser operation of AlyGa1−yAs−GaAs•GaAs−InxGa 1−xAs quantum-well heterostructure (QWH) crystals that utilize large-index-step high-contrast distributed Bragg reflector mirrors is presented.
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Native oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers
TL;DR: In this paper, the photopumped oxide-embedded AlAs•AlyGa1−yAs•GaAs•InxGa 1−xAs quantum well heterostructure was investigated.
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n‐p‐(p+‐n+)‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well laser with p+‐n+ GaAs‐InGaAs tunnel contact on n‐GaAs
TL;DR: In this paper, the growth, by metalorganic chemical vapor deposition, and fabrication of n−p (n−up) AlGaAs−GaAs•InGaAs quantum-well heterostructure lasers using a p+n+ GaAs−inGaAs reverse-biased tunnel junction to contact the n−type GaAs substrate is presented.
Journal ArticleDOI
Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures
John Dallesasse,Nick Holonyak,N. El-Zein,T. A. Richard,F. A. Kish,A. R. Sugg,R. D. Burnham,S. C. Smith +7 more
TL;DR: In this paper, it was shown that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers on AlyGa 1−yAs−AlzGa 1 −zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impuration induced layer disordering.