A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication

A digital delay-locked loop (DLL) that achieves infinite phase range and 40-ps worst case phase resolution at 400 MHz was developed in a 3.3-V, 0.4-/spl mu/m standard CMOS process. The DLL uses dual delay lines with an end-of-cycle detector, phase blenders, and duty cycle correcting multiplexers. This more easily process portable DLL achieves jitter performance comparable to a more complex analog DLL when placed into identical high-speed interface circuits fabricated on the same test-chip die. At 400 MHz, the digital DLL provides <250 ps peak-to-peak long-term jitter at 3.3 V and operates down to 1.7 V, where it dissipates 60 mW. The DLL occupies 0.96 mm/sup 2/.

A portable digital DLL for high-speed CMOS interface circuits

A method and circuit adaptively adjust the timing offset of a digital signal relative to a clock signal output coincident with that digital signal to enable a latch receiving the digital signal to store the digital signal responsive to the clock signal. The digital signal is applied to the latch, and stored in the latch responsive to the clock signal. The digital signal stored in the latch is evaluated to determine if the stored digital signal has an expected value. The timing offset of the digital signal is thereafter adjusted relative to the clock signal. and the digital signal is once again stored in the latch responsive to the clock signal at the new timing offset. A number of digital signals at respective timing offsets relative to the clock signal are stored and evaluated, and a final timing offset of the digital signal is selected from the ones of the timing offsets that cause the latch to store the digital signal having the expected value. The timing offset of the digital signal is thereafter adjusted to the selected final timing offset. A read synchronization circuit may adaptively adjust the timing offset of digital signals in this manner, and such a read synchronization circuit may be utilized in many types of integrated circuits, including packetized dynamic random access memories, memory systems including a memory controller and one or more such packetized dynamic random access memories, and in computer systems including a plurality of such packetized dynamic random access memories.

Method and apparatus for adaptively adjusting the timing offset between a clock signal and digital signals transmitted coincident with that clock signal, and memory device and system using same

A integrated circuit, such as a memory integrated circuit, includes a vernier clock adjustment circuit receiving an input clock signal and providing a rising-edge clock signal representing the input clock signal delayed by a rising-edge delay and providing a falling-edge clock signal representing the input clock signal delayed by a falling-edge delay. An edge triggered circuit receives data and the rising-edge and falling-edge clock signals, and stores data at the rising-edge of the rising-edge clock signal and at the falling-edge of the falling-edge clock signal. One form of the invention is a memory system having a memory controller coupled to memory modules through data and command busses. Each memory module includes the vernier clock adjustment circuitry.

Clock vernier adjustment

A system for adjusting the phase of an internal clock signal relative to an external clock signal in a packetized dynamic random access memory device. The system applies a plurality of initialization packets to the memory device that are captured in a shift register responsive to a transition of the internal clock signal. However, the phase of the internal clock signal is sequentially incremented after each initialization packet has been captured in the shift register. After a plurality of initialization packets have been captured, an evalution circuit identifies which phases of the internal clock signal clocked the shift register at the proper time to accurately capture each initialization packet. A single phase of the internal clock signal is then selected from within the range of internal clock signal phases that successfully captured initialization packets. This selected phase of the internal clock signal is used during normal operation of the memory device.

Method and apparatus for adaptively adjusting the timing of a clock signal used to latch digital signals, and memory device using same

A 256-Mb SDRAM (245.7 mm/sup 2/) has been developed using (1) a high cell occupation ratio (60.2%) array design for chip size reduction and a high yield, (2) a prefetched pipeline scheme (PPS) using a first-in first-out (FIFO) buffer with parallel serial converter for 250-MHz clock frequency operation, and (3) a synchronous mirror delay (SMD) circuit for 2.5-ns clock access and low standby current.

A 2.5 ns clock access 250 MHz 256 Mb SDRAM with a synchronous mirror delay

This paper describes three circuit technologies indispensable for high-bandwidth multibank DRAM's. (1) A clock generator based on a bidirectional delay (BDD) eliminates the output skew. The BDD measures the cycle time as the quantity charged or discharged of an analog quantity, and replicates it in the next cycle. This achieves a 0.18-mm/sup 2/, two-cycle-lock clock generator operating from 25 to 167 MHz with a 30-ps resolution. (2) A quad-coupled receiver eliminates the internal skew caused by the difference between a rise input and a fall input by 40%. (3) An interbank shared redundancy scheme (ISR) with a variable unit redundancy (VUR) efficiently increases yield in multibank DRAM's. The ISR allows redundancy match circuits to be shared with two or more banks. The VUR allows the number of units replaced to be variable. These circuit technologies achieved a 250-Mb/s/pin, 8-bank, 1-Gb double-data-rate synchronous DRAM.

T. Fukase

Papers

A 2.5 ns clock access 250 MHz 256 Mb SDRAM with a synchronous mirror delay

A 250-Mb/s/pin, 1-Gb double-data-rate SDRAM with a bidirectional delay and an interbank shared redundancy scheme