This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies ∼ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC roll-off, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode–based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 × 10−3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

/pdf/tunable-continuous-wave-terahertz-photomixer-sources-and-rulvqaamg0.pdf

Tunable, continuous-wave Terahertz photomixer sources and applications

The terahertz (THz) antennas, which have features of small size, wide frequency bandwidth and high data rate, are important devices for transmitting and receiving THz electromagnetic waves in the emerging THz systems. However, most of THz antennas suffer from relatively high loss and low fabrication precision due to their small sizes in high frequency bands of THz waves. Therefore, this paper presents a detailed overview of the most recent research on the performance improvement of THz antennas. Firstly, the development of THz antennas is briefly reviewed and the basic design ideas of THz antennas are introduced. Then, THz antennas are categorized as metallic antennas, dielectric antennas and new material antennas. After that, the latest research progress in THz photoconductive antennas, THz horn antennas, THz lens antennas, THz microstrip antennas and THz on-chip antennas are discussed. In particular, the practical difficulties for the development of THz antennas are discussed with promising approaches. In addition, this paper also presents a short review of the process technology of THz antennas. Finally, the vital challenges and the future research directions for THz antennas are presented.

An overview of terahertz antennas

Terahertz Communications: A 2020 vision

This paper describes an optical phase lock loop (OPLL) implemented as an ultraselective optical frequency comb line filter. The OPLL is based on a photonic integrated circuit (PIC) fabricated for the first time through a generic foundry approach. The PIC contains a distributed Bragg reflector (DBR) laser whose frequency and phase are stabilized by reference to an optical frequency comb generator. The OPLL output is a single-mode DBR laser line; other comb lines and noise at the output of the OPLL filter are attenuated by >58 dB below the peak power of the OPLL-filter output line. The OPLL bandwidth is up to 200 MHz, giving a filter quality factor greater than 1,000,000. The DBR laser can be tuned over 1 THz (8 nm), enabling different comb lines to be selected. Locking to a comb line with a frequency offset precisely selectable between 4 and 12 GHz is also possible. The coherence between the DBR laser and the comb lines is demonstrated by measurements of the heterodyne signal residual phase noise level, which is below −100 dBc/Hz at 5 kHz offset from the carrier. The OPLL-filter output can be up to 6 dB higher than the peak power of the comb line to be isolated by the filter. This optical gain is a unique characteristic which can significantly improve the SNR of communication or spectroscopy systems. This OPLL is envisaged to be used for high purity, tuneable microwave, millimetre-wave, and THz generation.

/pdf/optical-phase-lock-loop-as-high-quality-tuneable-filter-for-zzhiov8c91.pdf

Optical Phase Lock Loop as High-Quality Tuneable Filter for Optical Frequency Comb Line Selection

We studied on terahertz-quantum cascade lasers (THz-QCLs) using III-Nitride semiconductors, which are promising materials for the realization of the unexplored frequency range from 5 to 12 THz and the higher temperature operation on THz-QCLs, because these compounds have much larger longitudinal optical phonon energies (> 18 THz) than those of conventional GaAs-based materials (~ 9 THz). Firstly, we showed clearly that it is possible to design a GaN-based quantum cascade (QC) structure which operates in the THz range in which population inversion can be obtained, by performing numerical calculations based on a self-consistent rate equation model. Secondly, we succeeded in the stack of QC structure with a large number of periods and the drastic improvement of structural properties of QC structure, by introducing a new growth technique named "a droplet elimination by thermal annealing (DETA)" in which utilized the differences of the properties between metals (Al, Ga) and Nitrides (AlN, GaN) into molecular beam epitaxy. Finally, we for the first time successfully observed spontaneous electroluminescence due to intersubband transitions with peaks at frequencies from 1.4 to 2.8 THz from GaN/AlGaN QCL devices fabricated with using the DETA technique grown on a GaN substrate and a metal organic chemical vapor deposition (MOCVD)-AlN template on a sapphire substrate. In this paper, we demonstrate recent achievements on the quantum design, fabrication technique, and electroluminescence properties of GaN-based QCL structures.

Intersubband spontaneous emission from GaN-based THz quantum cascade laser

This paper presents a 10-Gb/s wireless link system that uses a 120-GHz-band sub-terahertz electro-magnetic waves. In the transmitter, photonic techniques are used for generation, modulation, and emission of the sub-THz signals, while the receiver is composed of all-electronic devices using InP-HEMTs

T. Furuta

Papers

Sub-Terahertz Wireless Communications Technologies