Preface. About the Authors. Acknowledgments. 1 Power Amplifier Fundamentals. 1.1 Introduction. 1.2 Definition of Power Amplifier Parameters. 1.3 Distortion Parameters. 1.4 Power Match Condition. 1.5 Class of Operation. 1.6 Overview of Semiconductors for PAs. 1.7 Devices for PA. 1.8 Appendix: Demonstration of Useful Relationships. 1.9 References. 2 Power Amplifier Design. 2.1 Introduction. 2.2 Design Flow. 2.3 Simplified Approaches. 2.4 The Tuned Load Amplifier. 2.5 Sample Design of a Tuned Load PA. 2.6 References. 3 Nonlinear Analysis for Power Amplifiers. 3.1 Introduction. 3.2 Linear vs. Nonlinear Circuits. 3.3 Time Domain Integration. 3.4 Example. 3.5 Solution by Series Expansion. 3.6 The Volterra Series. 3.7 The Fourier Series. 3.8 The Harmonic Balance. 3.9 Envelope Analysis. 3.10 Spectral Balance. 3.11 Large Signal Stability Issue. 3.12 References. 4 Load Pull. 4.1 Introduction. 4.2 Passive Source/Load Pull Measurement Systems. 4.3 Active Source/Load Pull Measurement Systems. 4.4 Measurement Test-sets. 4.5 Advanced Load Pull Measurements. 4.6 Source/Load Pull Characterization. 4.7 Determination of Optimum Load Condition. 4.8 Appendix: Construction of Simplified Load Pull Contours through Linear Simulations. 4.9 References. 5 High Efficiency PA Design Theory. 5.1 Introduction. 5.2 Power Balance in a PA. 5.3 Ideal Approaches. 5.4 High Frequency Harmonic Tuning Approaches. 5.5 High Frequency Third Harmonic Tuned (Class F). 5.6 High Frequency Second Harmonic Tuned. 5.7 High Frequency Second and Third Harmonic Tuned. 5.8 Design by Harmonic Tuning. 5.9 Final Remarks. 5.10 References. 6 Switched Amplifiers. 6.1 Introduction. 6.2 The Ideal Class E Amplifier. 6.3 Class E Behavioural Analysis. 6.4 Low Frequency Class E Amplifier Design. 6.5 Class E Amplifier Design with 50# Duty-cycle. 6.6 Examples of High Frequency Class E Amplifiers. 6.7 Class E vs. Harmonic Tuned. 6.8 Class E Final Remarks. 6.9 Appendix: Demonstration of Useful Relationships. 6.10 References. 7 High Frequency Class F Power Amplifiers. 7.1 Introduction. 7.2 Class F Description Based on Voltage Wave-shaping. 7.3 High Frequency Class F Amplifiers. 7.4 Bias Level Selection. 7.5 Class F Output Matching Network Design. 7.6 Class F Design Examples. 7.7 References. 8 High Frequency Harmonic Tuned Power Amplifiers. 8.1 Introduction. 8.2 Theory of Harmonic Tuned PA Design. 8.3 Input Device Nonlinear Phenomena: Theoretical Analysis. 8.4 Input Device Nonlinear Phenomena: Experimental Results. 8.5 Output Device Nonlinear Phenomena. 8.6 Design of a Second HT Power Amplifier. 8.7 Design of a Second and Third HT Power Amplifier. 8.8 Example of 2nd HT GaN PA. 8.9 Final Remarks. 8.10 References. 9 High Linearity in Efficient Power Amplifiers. 9.1 Introduction. 9.2 Systems Classification. 9.3 Linearity Issue. 9.4 Bias Point Influence on IMD. 9.5 Harmonic Loading Effects on IMD. 9.6 Appendix: Volterra Analysis Example. 9.7 References. 10 Power Combining. 10.1 Introduction. 10.2 Device Scaling Properties. 10.3 Power Budget. 10.4 Power Combiner Classification. 10.5 The T-junction Power Divider. 10.6 Wilkinson Combiner. 10.7 The Quadrature (90 ) Hybrid. 10.8 The 180 Hybrid (Ring Coupler or Rat-race). 10.9 Bus-bar Combiner. 10.10 Other Planar Combiners. 10.11 Corporate Combiners. 10.12 Resonating Planar Combiners. 10.13 Graceful Degradation. 10.14 Matching Properties of Combined PAs. 10.15 Unbalance Issue in Hybrid Combiners. 10.16 Appendix: Basic Properties of Three-port Networks. 10.17 References. 11 The Doherty Power Amplifier. 11.1 Introduction. 11.2 Doherty's Idea. 11.3 The Classical Doherty Configuration. 11.4 The 'AB-C' Doherty Amplifier Analysis. 11.5 Power Splitter Sizing. 11.6 Evaluation of the Gain in a Doherty Amplifier. 11.7 Design Example. 11.8 Advanced Solutions. 11.9 References. Index.

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High Efficiency RF and Microwave Solid State Power Amplifiers

We have developed 0.1-/spl mu/m gate-length InAlAs-InGaAs-InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 /spl mu/m gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The extrapolated f/sub max/ of 600 GHz is the highest reported to date for any transistor, and smaller, 30-/spl mu/m devices fabricated on the same wafer exhibit excellent noise figure (1.4 dB at 94 GHz), demonstrating the applicability of this technology to multifunction MMICs. >

W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

Results are presented for high performance planar W-band filters based on silicon micromachining techniques common in microsensor fabrication. Two types of micromachined planar transmission lines are studied: microshield line and shielded membrane microstrip (SMM) line. In both of these structures, the conducting lines are suspended on thin dielectric membranes. These transmission lines are essentially "floating" in air, possess negligible levels of dielectric loss, and do not suffer from the parasitic effects of radiation and dispersion. A 90 GHz low pass filter and several 95 GHz bandpass filters are tested and display excellent performance which cannot be achieved with traditional substrate supported circuits in CPW or microstrip configurations. A full-wave finite-difference time-domain (FDTD) technique verifies the measured performance of the W-band circuits and provides a basis for comparison between the performances of membrane supported circuits and equivalent substrate supported circuits.

Micromachined W-band filters

Presented is the development of a 2-stage 427 mW (26.3 dBm), 19% PAE compact W-band InP monolithic microwave integrated circuit (MMIC) power amplifier with an associated power gain of 8.9 dB. 20% PAE with output power of 407 mW (26.1 dBm) was achieved when the amplifier was biased for optimal efficiency. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-/spl mu/m InGaAs/InAlAs/InP HEMT technology. InP amplifier, though operates at lower drain voltage, but it delivers compatible power with double the PAE of its GaAs counter-part.

A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier

High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development. >

High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35 degrees C to +65 degrees C temperature range. The downconverter design was a first pass success and has a high circuit yield. >

A W-band monolithic downconverter

The authors have designed and fabricated monolithic power amplifiers using pseudomorphic InGaAs power HEMTs (high-electron-mobility transistors) with record power and gain performance at W-band frequency The two-stage amplifier has a small-signal gain of 9 dB and can deliver 01-W output power with 59-dB associated gain and 66% power-added efficiency at 935 GHz The successful first pass design of the W-band MMIC (monolithic microwave integrated circuit) power amplifier is due to the superior device performance and the millimeter-wave monolithic power amplifier design techniques >

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

An ultra-low-noise W-band monolithic three-stage amplifier based on 0.1- mu m pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) devices has been developed. This amplifier has a measured noise figure of 3.5 dB with an associated small signal gain of 21 dB at 94 GHz. This is the best reported performance of a monolithic W-band high-gain low-noise amplifier (LNA), significantly improved compared with previous records in terms of noise figure and associated gain. Accurate modeling techniques were essential to the success of this monolithic circuit design, which included active device and full-wave electromagnetic analysis of passive matching structures. The measured results of the W-band three-stage monolithic microwave integrated circuit (MMIC) LNA from 91 to 97 GHz are presented. >

An ultra low noise W-band monolithic three-stage amplifier using 0.1- mu m pseudomorphic InGaAs/GaAs HEMT technology

A monolithic W-band power amplifier has been developed to promote the output power performance, This monolithic two-stage balanced power amplifier has demonstrated a small signal gain of 7 dB and an output power of 175 mW at 90 GHz, which represents state-of-the-art output power performance for a monolithic amplifier at this frequency. This monolithic chip is fabricated using 0.1-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic power HEMT MMIC production process. >

T.H. Chen

Papers

High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology

A W-band monolithic downconverter

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

An ultra low noise W-band monolithic three-stage amplifier using 0.1- mu m pseudomorphic InGaAs/GaAs HEMT technology

A W-band monolithic 175-mW power amplifier