T
T.K. Liang
Researcher at National Institute of Information and Communications Technology
Publications - 9
Citations - 268
T.K. Liang is an academic researcher from National Institute of Information and Communications Technology. The author has contributed to research in topics: Silicon & Absorption (electromagnetic radiation). The author has an hindex of 5, co-authored 9 publications receiving 256 citations.
Papers
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Journal ArticleDOI
Ultrafast all-optical switching by cross-absorption modulation in silicon wire waveguides.
T.K. Liang,L.R. Nunes,Takahide Sakamoto,Kiyotaka Sasagawa,Tetsuya Kawanishi,Masahiro Tsuchiya,Gino Priem,D. Van Thourhout,Pieter Dumon,Roel Baets,Hon Ki Tsang +10 more
TL;DR: The use of two-photon absorption in submicron silicon wire waveguides for all-optical switching by cross-absorption modulation is described and successfully converted from high power pump to low power continuous-wave signal with a fast recovery time.
Journal ArticleDOI
High speed logic gate using two-photon absorption in silicon waveguides
T.K. Liang,L.R. Nunes,Masahiro Tsuchiya,Kazi S. Abedin,Tetsuya Miyazaki,D. Van Thourhout,W. Bogaerts,Pieter Dumon,Roel Baets,Hon Ki Tsang +9 more
TL;DR: In this paper, an all-optical logic NOR gate which does not rely on free carriers but instead uses two-photon absorption was reported, which required low pulse energy (few pJ) for logic gate operation.
Proceedings ArticleDOI
Low energy ultrafast switching in silicon wire waveguides
L.R. Nunes,T.K. Liang,Kazi S. Abedin,D. Van Thourhout,P. Dumon,R. Baets,Hon Ki Tsang,Tetsuya Miyazaki,Masahiro Tsuchiya +8 more
TL;DR: In this paper, a submicron-size silicon wire waveguides with induced optical absorption from two-photon absorption (TPA) process has been demonstrated at 40 GHz repetition rate.
Journal ArticleDOI
Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme
TL;DR: If the waveguide lengths and pump powers are optimized, the net continuous-wave Raman gain and thus lasing activities in such waveguides without any additional free carrier extraction schemes is possible.
Proceedings ArticleDOI
All-optical high speed NOR gate based on two photon absorption in silicon wire waveguides
T.K. Liang,L.R. Nunes,Masahiro Tsuchiya,Kazi S. Abedin,Tetsuya Miyazaki,D. Van Thourhout,Pieter Dumon,Roel Baets,Hon Ki Tsang +8 more
TL;DR: In this paper, the authors demonstrate an all-optical logic NOR gate in submicron size silicon wire waveguides using pump induced non-degenerate two-photon absorption inside the waveguide.