T
T. Srinivasan
Researcher at Solid State Physics Laboratory
Publications - 31
Citations - 156
T. Srinivasan is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 6, co-authored 25 publications receiving 118 citations.
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Journal ArticleDOI
Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots
T. Srinivasan,S.N. Singh,Umesh Tiwari,R.K. Sharma,Rangarajan Muralidharan,D.V. Sridhara Rao,R. Balamuralikrishnan,K. Muraleedharan +7 more
TL;DR: In this paper, structural and photoluminescence (PL) studies on vertically aligned, 20-period In 0.33 Ga 0.67 As/GaAs quantum dot stacks, grown by molecular beam epitaxy (MBE), were compared.
Recent advances in cartosat-1 data processing
Pradeep Kumar Srivastava,T. Srinivasan,Amit Gupta,Sanjay Singh,Shilpa Prakash,B. Kartikeyan,B. Gopala Krishna +6 more
TL;DR: The Cartosat-1 data processing team has completed design and testing of software for generation of CartoDEM, image quality improvement using Point Spread Function (PSF) based image restoration and block adjustment exercises using COTS software package.
Proceedings ArticleDOI
CLiMB: A Continual Learning Benchmark for Vision-and-Language Tasks
T. Srinivasan,Ting-Yun Chang,Leticia Leonor Pinto Alva,Georgios Chochlakis,Mohammad Reza Rostami,Jesse Thomason +5 more
TL;DR: It is shown that common CL methods can help mitigate forgetting during multimodal task learning, but do not enable cross-task knowledge transfer, and that CLiMB will facilitate research on a new class of CL algorithms for this challenging multimodals setting.
Journal ArticleDOI
High-resolution XRD analysis of swift heavy ion irradiated InGaAs/gaas heterostructures
S. Dhamodaran,N. Sathish,Anand P. Pathak,Sumaira Khan,D.K. Avasthi,T. Srinivasan,Rangarajan Muralidharan,Brij M. Arora +7 more
TL;DR: In this paper, the effect of heavy ion irradiation on molecular beam epitaxy grown InGaAs/GaAs heterostructures has been studied by high-resolution X-ray diffraction.
Journal ArticleDOI
Interface engineered MBE grown InAs/GaSb based type-II superlattice heterostructures
Puspashree Mishra,Rakesh.K. Pandey,Soni Kumari,Akhilesh Pandey,Sandeep Dalal,R. Sankarasubramanian,Samartha Channagiri,Suresh K. Jangir,R. Raman,T. Srinivasan,D.V. Sridhara Rao +10 more
TL;DR: In this article, a strain balanced InAs/GaSb type-II superlattice structures have been grown using molecular beam epitaxy, where InSb like interfaces have been introduced at both InAs on GaSb and InAs surfaces using migration enhanced epitaxy to compensate the tensile strain between the constituent binaries of the super-link.