R
R. Balamuralikrishnan
Researcher at Defence Metallurgical Research Laboratory
Publications - 29
Citations - 458
R. Balamuralikrishnan is an academic researcher from Defence Metallurgical Research Laboratory. The author has contributed to research in topics: Microstructure & Alloy. The author has an hindex of 9, co-authored 25 publications receiving 387 citations.
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Effect of vanadium and titanium modification on the microstructure and mechanical properties of a microalloyed HSLA steel
TL;DR: In this paper, modifications to the base DMR-249A steel composition have been investigated with the objective of producing thicker gage plates (24mm) capable of meeting the specified properties in the normalized condition.
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Tensile Properties of Ni-Based Superalloy 720Li: Temperature and Strain Rate Effects
TL;DR: In this article, the effect of strain rate on tensile behavior of a wrought nickel-base superalloy 720Li has been studied in standard solutionized and two-stage-aged condition in the temperature range of 25°C to 750°C.
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Low cycle fatigue behaviour of a low interstitial Ni-base superalloy
TL;DR: In this paper, the low cycle fatigue behavior of precipitation strengthened nickel-base superalloy 720Li with a low concentration of interstitial carbon and boron was studied at 25, 400 and 650 degrees C. The number of reversals to failure vs. plastic strain amplitude plot exhibits a bilinear Coffin-Manson relation.
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Microstructure and magnetostriction of Tb0.3Dy0.7Fe1.95 prepared under different solidification conditions by zoning and modified Bridgman techniques
Mithun Palit,S. Pandian,R. Balamuralikrishnan,A.K. Singh,Niranjan Das,V. Chandrasekharan,G. Markandeyulu +6 more
TL;DR: In this paper, the microstructure of directionally solidified intermetallic compounds has been investigated as a function of solidification rate and compared with that of conventionally cast compounds, and the observed microstructural features of these samples have been correlated with the magnetostriction measured on the corresponding samples.
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Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots
T. Srinivasan,S.N. Singh,Umesh Tiwari,R.K. Sharma,Rangarajan Muralidharan,D.V. Sridhara Rao,R. Balamuralikrishnan,K. Muraleedharan +7 more
TL;DR: In this paper, structural and photoluminescence (PL) studies on vertically aligned, 20-period In 0.33 Ga 0.67 As/GaAs quantum dot stacks, grown by molecular beam epitaxy (MBE), were compared.