There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

Handbook of Chemistry and Physics

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

https://iopscience.iop.org/article/10.1088/1468-6996/16/2/023501/pdf

Recent progress on magnetic iron oxide nanoparticles: synthesis, surface functional strategies and biomedical applications.

Sensing technology has been widely investigated and utilized for gas detection. Due to the different applicability and inherent limitations of different gas sensing technologies, researchers have been working on different scenarios with enhanced gas sensor calibration. This paper reviews the descriptions, evaluation, comparison and recent developments in existing gas sensing technologies. A classification of sensing technologies is given, based on the variation of electrical and other properties. Detailed introduction to sensing methods based on electrical variation is discussed through further classification according to sensing materials, including metal oxide semiconductors, polymers, carbon nanotubes, and moisture absorbing materials. Methods based on other kinds of variations such as optical, calorimetric, acoustic and gas-chromatographic, are presented in a general way. Several suggestions related to future development are also discussed. Furthermore, this paper focuses on sensitivity and selectivity for performance indicators to compare different sensing technologies, analyzes the factors that influence these two indicators, and lists several corresponding improved approaches.

A Survey on Gas Sensing Technology

The agglomeration behavior of Cu and Au films each with a thickness of 5 and 50 nm, deposited on thermally grown SiO2 by dc magnetron sputtering, was investigated with scanning electron microscopy. The size of Cu islands formed by agglomeration increased with increasing annealing temperature. Also, the agglomeration of Cu films seem to follow the grain boundary grooving process. On the other hand, Au islands have an identical size at different annealing temperatures. Au films were observed to agglomerate via nucleation of voids followed by the fractal growth of voids. The fractal dimension was determined to be 1.7 indicating that the fractal growth of voids can be described with a diffusion limited aggregation model. Finally, the kinetics of agglomeration of the Au films was described with an Avrami-type equation.

Comparison of the agglomeration behavior of Au and Cu films sputter deposited on silicon dioxide

Effect of P3HT:PCBM concentration in solvent on performances of organic solar cells

The stability and efficiency of organic solar cells (OSCs) were improved using thermally stable fluorine-doped tin oxide (FTO) as the bottom electrode and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and TiO2 as the buffer layers. The TiO2 layer between FTO and the P3HT:PCBM active layer improved the interface characteristics for a better charge transfer. The PEDOT:PSS layer retarded the oxygen diffusion to the active layer. A maximum power conversion efficiency of 4.3% was obtained for the inverted structure of FTO/TiO2/P3HT:PCBM/PEDOT:PSS/Ag with a stable performance, and the cell retained over 65% of its initial efficiency after 500 h. Additionally, the OSCs were fabricated using all-solution based vacuum-free processes with screen printing for the Ag electrode and the results were comparable to the device that used an evaporated Ag electrode.

Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells

Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO2 nanopores

The nucleation behavior of Ru deposited by atomic layer deposition (ALD) using bis(ethylcyclopentadienyl)ruthenium precursor and O2 reactant is investigated as a function of the number of ALD cycles. The substrates are thermally grown SiO2, NH3 plasma-treated SiO2, and chemical vapor deposited SiNx. The nucleation of Ru strongly depends on the substrate and is much enhanced on the nitride substrates. Transmission electron microscopy analysis reveals that the maximum density of the nuclei is 5.7×1010cm−2 on the SiO2 surface at 500 ALD cycles, 1.2×1012cm−2 on SiNx at 160 ALD cycles, and 2.3×1012cm−2 on NH3 plasma-nitrided SiO2 at 110 ALD cycles. Although the kinetics of Ru nucleation is different on the various substrates, the overall nucleation process in each case consists of an initial slow nucleation stage and a subsequent fast nucleation stage before the coalescence of the nuclei occurs. Considering the adsorption of Ru precursor on the substrate and the surface diffusion of deposited Ru during an ALD ...

Tae-Sik Yoon

Papers

Comparison of the agglomeration behavior of Au and Cu films sputter deposited on silicon dioxide

Effect of P3HT:PCBM concentration in solvent on performances of organic solar cells

Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells

Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO2 nanopores

Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition