Tae-Youb Kim

TL;DR: In this paper, a light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition was fabricated.

TL;DR: This paper reports a novel detection technique for direct label-free immunodetection of cancer markers in human serum using a Si-FET that was fabricated by conventional photolithographic processes, and believes that connecting this simple electrical detection method with well-established whole blood filter technology will contribute to the development of new point-of-care testing (POCT) sensors.

TL;DR: In this paper, the Schottky barrier nanowire field effect transistor (SBMFET) was used to construct a gate electrode and a gate insulation layer between the channel and the gate electrode.

TL;DR: In this paper, the effect of the oxygen pressure and the deposition temperature on the electrical and optical properties of the Sn-doped indium oxide (ITO) films on quartz glass substrate by pulsed laser deposition (PLD) using a 10 wt.% SnO 2 -doped In 2 O 3 target.

TL;DR: A digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.