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Tai-Lung Wu

Researcher at Purdue University

Publications -  22
Citations -  558

Tai-Lung Wu is an academic researcher from Purdue University. The author has contributed to research in topics: Mesoscopic physics & Graphene. The author has an hindex of 13, co-authored 22 publications receiving 490 citations. Previous affiliations of Tai-Lung Wu include State University of New York System & University at Buffalo.

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Distinctive finite size effects on the phase diagram and metal–insulator transitions of tungsten-doped vanadium(IV) oxide

TL;DR: In this article, the effect of finite size on the phase stability of solid-solution WxV1−xO2 has been studied and it is shown that the depression in phase transition temperature saturates at relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants.
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Temperature and voltage driven tunable metal-insulator transition in individual W x V 1 − x O 2 nanowires

TL;DR: In this article, an abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition temperature decreases with increasing W content at a pronounced rate of $\ensuremath{-}$(48\char21{}56) K/at.
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Single-Nanowire Raman Microprobe Studies of Doping-, Temperature-, and Voltage-Induced Metal–Insulator Transitions of WxV1–xO2 Nanowires

TL;DR: This study uses individual nanowire Raman microprobe mapping to examine the structural phase progressions underlying the metal-insulator transitions of solution-grown W(x)V(1-x)O(2) nanowires, and suggests the establishment of a coexistence regime within individual Nanowires wherein M1 and R phases simultaneously exist before the percolation threshold is reached and thenanowire becomes entirely metallic.
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Synthesis, spectroscopic characterization, and observation of massive metal-insulator transitions in nanowires of a nonstoichiometric vanadium oxide bronze.

TL;DR: It is noted here the unprecedented observation of a four-orders-of-magnitude metal-insulator transition in single nanowires of delta-K(x)V(2)O(5), when temperature is varied, which thus represents a rare new addition to the pantheon of materials exhibiting pronounced metal- insulator transitions in proximity to room temperature.
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Optical phonons in twisted bilayer graphene with gate-induced asymmetric doping.

TL;DR: In this paper, twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed.