T
Takahiro Kawashima
Researcher at Panasonic
Publications - 75
Citations - 1273
Takahiro Kawashima is an academic researcher from Panasonic. The author has contributed to research in topics: Layer (electronics) & Substrate (electronics). The author has an hindex of 17, co-authored 75 publications receiving 1245 citations. Previous affiliations of Takahiro Kawashima include Kobe University.
Papers
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Journal ArticleDOI
Optical properties of hexagonal GaN
TL;DR: In this article, the effects of surface roughness using an effective medium model were analyzed for single-crystalline hexagonal GaN (α-GaN) films and the most reliable e(E) values were obtained in the 1.25-10 eV photon energy range.
Journal ArticleDOI
Control of surface migration of gold particles on Si nanowires.
Takahiro Kawashima,Tatsunori Mizutani,Tohru Nakagawa,Hideo Torii,Tohru Saitoh,Kazunori Komori,Minoru Fujii +6 more
TL;DR: It is shown that insufficient supply of Si source to the Au-Si eutectic on top of theSiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au- Si eutECTic, which is precipitated on thesurface as Au particles during cooling.
Journal ArticleDOI
Optical constants of CuGaSe2 and CuInSe2
TL;DR: In this paper, the complex dielectric functions of chalcopyrite semiconductors were measured by spectroscopic ellipsometry in the photon energy range between 1.2 and 5.3 eV at room temperature.
Patent
Method for producing semiconductor chip, and field effect transistor and method for manufacturing same
TL;DR: In this paper, two or more semiconductor layers are first formed on a substrate by repeatedly forming a sacrifice layer (11) and a semiconductor layer (12) in this order on the substrate.
Patent
Semiconductor crystal film and method for preparation thereof
Yoshihiko Kanzawa,Tohru Saitoh,Katsuya Nozawa,Minoru Kubo,Yoshihiro Hara,Takeshi Takagi,Takahiro Kawashima +6 more
TL;DR: A multilayer film allows the expansion of the range wherein a semiconductor crystal layer having C atoms in lattice positions is capable of functioning as a SiGeC layer to a composition having a greater proportion of Ge as discussed by the authors.