S
Shunro Fuke
Researcher at Shizuoka University
Publications - 74
Citations - 1919
Shunro Fuke is an academic researcher from Shizuoka University. The author has contributed to research in topics: Epitaxy & Substrate (electronics). The author has an hindex of 18, co-authored 74 publications receiving 1803 citations. Previous affiliations of Shunro Fuke include Osaka University.
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Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
TL;DR: In this article, the performance of non-oped GaN films with the polar surface in KOH solution has been investigated and it is confirmed that the continuous etching in Koh solution takes place only for the GaN film with N-face (−c) polarity independent of the deposition method and growth condition.
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Optical properties of hexagonal GaN
TL;DR: In this article, the effects of surface roughness using an effective medium model were analyzed for single-crystalline hexagonal GaN (α-GaN) films and the most reliable e(E) values were obtained in the 1.25-10 eV photon energy range.
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Dependence of impurity incorporation on the polar direction of GaN film growth
TL;DR: In this paper, the authors investigated the dependence of impurity incorporation on the polar direction of GaN growth by using secondary ion mass spectroscopy (SIMS) and found that the impurities related to carbon, oxygen, and aluminum are more readily incorporated into N-face GaN films.
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Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
Masatomo Sumiya,K. Yoshimura,Takahiro Ito,Kohji Ohtsuka,Shunro Fuke,Keisuke Mizuno,Mamoru Yoshimoto,Hideomi Koinuma,Akira Ohtomo,Masashi Kawasaki +9 more
TL;DR: The dependence of polar direction of GaN film on growth conditions has been investigated by changing either the group-V/group-III ratio (V/III ratio) in supplying the source gas or the deposition rate as mentioned in this paper.
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Donor–acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates
K. Tamura,Takayuki Makino,Atsushi Tsukazaki,Masatomo Sumiya,Shunro Fuke,T. Furumochi,Mikk Lippmaa,C. H. Chia,Yusaburo Segawa,Hideomi Koinuma,Masashi Kawasaki +10 more
TL;DR: In this paper, nitrogen-doped ZnO:N films were grown by laser molecular-beam epitaxy and the results indicate the formation of an acceptor state, which is not the case in this paper.