Showing papers by "Takashi Tokuda published in 1997"
TL;DR: In this article, compositional splitting and the existence of InN inclusion in the GaInN epilayer grown on sapphire (0001) substrates were investigated and the mechanism of compositional inhomogeneity was discussed.
Abstract: Compositional inhomogeneity in a GaInN ternary alloy layer is investigated A theoretical estimation of the interaction parameter based on the delta lattice parameter suggests that the immiscibility of InN in a nitride alloy is very strong We investigate the compositional splitting and the existence of InN inclusion in the GaInN epilayer grown on sapphire (0001) substrates The mechanism of compositional inhomogeneity is discussed
97 citations
TL;DR: In this article, a mirror-like GaN epitaxial layer with a mirrorlike surface was obtained without any buffer layer technique, attributed to extremely high nucleation density by the plasma-excited organometallic vapor phase epitaxy at early stage of the growth.
20 citations