Takayuki Narushima

TL;DR: In this article, the authors investigated the oxidation behavior of chemically vapor deposited (CVD) SiC at high temperature using a thermogravimetric technique in the temperatures range of 1823 to 1948 K.

TL;DR: In this paper, two kinds of oxidation (passive and active) and active-to-passive transition of silicon-based ceramics were discussed thermodynamically, and the rate constants of passive/active oxidation and active topassive oxygen potentials for SiC and Si 3 N 4 were reviewed.

TL;DR: In this paper, a unique texture formation in Inconel 718 (IN718) using a bidirectional laser scan in a laser powder bed fusion (LPBF) process for tailoring the mechanical properties was demonstrated.

TL;DR: In this paper, the authors examined the active oxidation behavior of chemically vapor-deposited silicon carbide in an O2 atmosphere at 0.1 MPa in the temperature range between 1840 and 1923 K.

TL;DR: In this article, a thermogravimetric analysis of chemically vapor-deposited SiC in wet O2 was performed in the temperature range of 1823 to 1923 K. The activation energies of linear and parabolic rate constants were 428 and 397 kJ · mol−1, respectively, and it was shown that the rate controlling step is a chemical reaction at an SiC/SiO2 interface in the linear oxidation regime, and the rate-controlling step is an oxygen diffusion process through the oxide film (cristobalite) in the parabolic