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Showing papers by "Takeyoshi Onuma published in 2011"


Journal ArticleDOI
TL;DR: In this article, the structural and luminescent properties of m-plane AlxGa1−xN epilayers are analyzed using cross-sectional transmission-electron microscopy and transmissionelectron diffraction analyses.
Abstract: Impacts of grown-in anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN (FS-GaN) substrates on the structural and luminescent properties of m-plane AlxGa1−xN epilayers are described. The results of cross-sectional transmission-electron microscopy and transmission-electron diffraction analyses reveal the following plane defects formation, even in mostly pseudomorphic epilayers: (i) The formation of basal-plane stacking faults (BSFs) is hard to avoid in the case of lattice-mismatched AlxGa1−xN thick film growth and (ii) the anisotropic greater m-plane tilt mosaic along the a-axis (twist in c-plane) of FS-GaN gives rise to pronounced formation of surface striations along the c-axis and planar-defect network (PDN) located on prismatic {101¯0} planes and pyramidal {11¯0n} planes, which are often terminated by BSF, especially in the case of the epilayers grown by NH3-source molecular-beam epitaxy. These PDNs are assigned by spatially resolved cathodoluminescence (CL) and time-resolved photolum...

5 citations