T
Tatsushi Akazaki
Researcher at Nippon Telegraph and Telephone
Publications - 141
Citations - 3991
Tatsushi Akazaki is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Superconductivity & Semiconductor. The author has an hindex of 23, co-authored 141 publications receiving 3795 citations. Previous affiliations of Tatsushi Akazaki include University of Tsukuba & Tokyo University of Science.
Papers
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Journal ArticleDOI
Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure
TL;DR: In this article, the spin-orbit interaction in an inverted I${\mathrm{n}}_{0.53}$G${a}}{0.48}$As quantum well can be controlled by applying a gate voltage.
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Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry.
TL;DR: In this paper, the authors investigated the values of the Rashba spin-orbit coupling constant alpha in In(0.52)Al (0.48)As/In( 0.53)Ga(0.,0.47)In(0,0.51)Al(0,.48)InIn(In,0,1.52),Al( 0,0.,1.48),In, 0,1.,0,2.
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Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence
C. M. Hu,Junsaku Nitta,Tatsushi Akazaki,Hideaki Takayanagi,Jiro Osaka,P. Pfeffer,W. Zawadzki +6 more
TL;DR: In this article, the gate voltage dependence of the spin-orbit coupling parameter is analyzed and the second subband is shown to have a nonparabolic effect on gate voltage and electron concentration in the Shubnikov-de Haas oscillation.
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Observation of maximum supercurrent quantization in a superconducting quantum point contact
TL;DR: In this article, the critical current in a superconducting quantum point contact consisting of a split-gate superconductor-(two-dimensional electron gas)-superconductor junction was confirmed.
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A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure
TL;DR: In this article, a Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure.