T
Tatsuya Kakehi
Researcher at Denso
Publications - 28
Citations - 473
Tatsuya Kakehi is an academic researcher from Denso. The author has contributed to research in topics: Electrode & Thin-film transistor. The author has an hindex of 10, co-authored 28 publications receiving 468 citations. Previous affiliations of Tatsuya Kakehi include Fujitsu.
Papers
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Journal ArticleDOI
High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
Akito Hara,Michiko Takei,Fumiyo Takeuchi,Katsuyuki Suga,Kenichi Yoshino,Mitsuru Chida,Tatsuya Kakehi,Yoshiki Ebiko,Yasuyuki Sano,Nobuo Sasaki +9 more
TL;DR: In this article, high performance low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) with large grains were created using diode pumped solid state (DPSS) continuous wave (CW) laser lateral crystallization (CLC), employing fabrication processes at 450°C.
Proceedings ArticleDOI
High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization
Akito Hara,Y. Mishima,Tatsuya Kakehi,Fumiyo Takeuchi,Michiko Takei,Kenichi Yoshino,K. Suga,Mitsuru Chida,Nobuo Sasaki +8 more
TL;DR: In this article, a stable scanning DPSS CW laser lateral crystallization without introduction of thermal damage to 300/spl times/300 mm/sup 2/ glass substrates with process temperature below 450/spl deg/C.
Patent
Power supply voltage booster
TL;DR: In this article, a voltage boosting circuit is proposed to avoid the inadequate step-up capability caused by a drop in the supply voltage VB by turning off the switching device when current flowing through the switch device into the coil is determined to have increased to a switch-off threshold value when the switching devices is ON.
Patent
Method of manufacturing thin film transistors in a liquid crystal display
Mari Hodate,Norihisa Matsumoto,Kohji Ohgata,Tamotsu Wada,Ken-iti Yanai,Oki Kenichi,Yasuyoshi Mishima,Michiko Takei,Tatsuya Kakehi,Masahiro Okabe +9 more
TL;DR: In this paper, a method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconducting layer with a gate electrode and a resist film as a mask after a resist-film is formed on the top and the side of the gate electrode by soaking the gate-node in an electrolyte containing resist and applying voltage to the gate electrodes.
Journal ArticleDOI
Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system
TL;DR: In this article, the authors used an ultrahigh-vacuum (UHV) sputtering system to grow polycrystalline silicon films at substrate temperatures under 500°C.