A number of studies have demonstrated considerable plasma volume changes during and after exposure to different environmental and physiological conditions. These changes are thought to result from transient fluid shifts into (haemodilution) and out of (haemoconcentration) the intravascular space. If the levels of plasma constituents are to be routinely measured for research purposes or used as indicators of training adaptation or the health of an athlete, then it is important to consider the dynamic nature of plasma volume. Controversy still exists over the relevance of plasma volume interactions with plasma constituent levels, and while some investigators have taken plasma volume shifts into account, others have chosen to ignore these changes. Bouts of acute exercise have been shown to produce a transient haemoconcentration immediately after long distance running, bicycle ergometry and both maximal and submaximal swimming exercise. While these changes are transient, lasting only a few hours, other studies have reported a longer term haemodilution following acute exercise. In addition, endurance training has been shown to cause long term expansion of the plasma volume. It would, therefore, seem important to consider the influence of plasma volume changes on plasma solutes routinely measured for research, and as markers of training adaptation, prior to arriving at conclusions and recommendations based purely on their measured plasma level. To further confound this issue, plasma volume changes are known to be associated with heat acclimatisation, hydration state, physical training and postural changes, all of which may differ from one experiment or exercise bout to the next, and should thus be taken into account.

The influence of exercise-induced plasma volume changes on the interpretation of biochemical parameters used for monitoring exercise, training and sport.

https://openresearch-repository.anu.edu.au/bitstream/1885/40838/3/review1.pdf

A review of thin-film crystalline silicon for solar cell applications. Part 2: Foreign substrates

Nanocrystalline TiO2 thin films, deposited on single crystal Si (100) substrates under different temperature conditions by the sol–gel dip coating method, have been investigated for their optical properties using ultraviolet-visible spectroscopic ellipsometry. A gradual increase in refractive index, n, with increasing annealing temperature up to 600 °C, and thereafter a sharp increase in n at 800 °C of annealing temperature have been observed. For the heat-treated and low temperature (400 °C) annealed films, n is found to be higher at the film–substrate interface than at the film surface and the refractive index gradient slightly increases for the annealed sample. However, for the 600 °C temperature annealed film, the refractive index gradient significantly decreases and the film appears to be almost homogeneous. These results are in sharp contrast with those for the films deposited on a vitreous silica substrate where n was found to be higher at the film surface than at the film–substrate interface and t...

Refractive index and degree of inhomogeneity of nanocrystalline TiO2 thin films: Effects of substrate and annealing temperature

Amorphous and nanocrystalline TiO2 thin films coated on
a vitreous silica substrate by a solgel dip coating method are
investigated for optical properties by spectroscopic ellipsometry
(SE) together with transmission spectroscopy. A method of
analysis of SE data to determine the degree of inhomogeneity of
TiO2 films has also been presented. Instead of the
refractive index, the volume fraction of void has been assumed to vary
along the thickness of the films and an excellent agreement between the
experimental and calculated data of SE below the fundamental band gap
has been obtained. The transmission spectrum of these samples is
inverted to obtain the extinction coefficient k spectrum in
the wavelength range of 300–1600 nm by using the refractive indices
and parameters of structure determined by SE. The nonzero
extinction coefficient below the fundamental band-gap energy (3.2
eV) has been obtained for the nanocrystalline TiO2 and
shows the presence of optical scattering in the film.

Determination of optical constants of solgel-derived inhomogeneous TiO 2 thin films by spectroscopic ellipsometry and transmission spectroscopy

AIM In this study, we quantified acute changes in the intracellular and extracellular fluid compartments during upright neutral- and cold-water immersion. We hypothesized that, during short-term cold immersion, fluid shifts would be wholly restricted to the extracellular space. METHODS Seven males were immersed 30 days apart: control (33.3 degrees SD 0.6 degrees C); and cold (18.1 degrees SD 0.3 degrees C). Posture was controlled for 4 h prior to a 60-min seated immersion. RESULTS Significant reductions in terminal oesophageal (36.9 degrees +/- 0.1 degrees -36.3 degrees +/- 0.1 degrees C) and mean skin temperatures (30.3 degrees +/- 0.3 degrees -23.0 degrees +/- 0.3 degrees C) were observed during the cold, but not the control immersion. Both immersions elicited a reduction in intracellular fluid [20.17 +/- 6.02 mL kg(-1) (control) vs. 22.72 +/- 9.90 mL kg(-1)], while total body water (TBW) remained stable. However, significant plasma volume (PV) divergence was apparent between the trials at 60 min [12.5 +/- 1.0% (control) vs. 6.1 +/- 3.1%; P < 0.05], along with a significant haemodilution in the control state (P < 0.05). Plasma atrial natriuretic peptide concentration increased from 18.0 +/- 1.6 to 58.7 +/- 15.1 ng L(-1) (P < 0.05) during cold immersion, consistent with its role in PV regulation. We observed that, regardless of the direction of the PV change, both upright immersions elicited reductions in intracellular fluid. CONCLUSION These observations have two implications. First, one cannot assume that PV changes reflect those of the entire extracellular compartment. Second, since immersion also increases interstitial fluid pressure, fluid leaving the interstitium must have been rapidly replaced by intracellular water.

Effects of immersion water temperature on whole-body fluid distribution in humans.

Using an ultrahigh‐vacuum (UHV) sputtering system, we could grow two new methods of polycrystalline silicon films. The one is as‐deposited polycrystalline silicon on glass at substrate temperatures under 500 °C. The other is solid‐phase‐crystallization by thermal annealing of as‐deposited amorphous silicon films in a UHV. As‐deposited polycrystalline silicon films were oriented to (220) and grain sizes were determined from half‐width of x‐ray diffraction to be about 40 nm. From the deposition temperature dependence of the x‐ray diffraction peak intensity, the activation energy of the crystalline growth was calculated to be about 0.6 eV. Hydrogen atoms in the sputtering gas lower the reproducibility of as‐deposited poly‐Si. Polycrystalline silicon films produced by thermal annealing of as‐deposited amorphous silicon films at 550 °C in UHV have a (111) orientation. Field‐effect mobilities of the as‐deposited polycrystalline silicon film and the polycrystalline silicon film by UHV thermal annealing were 5 an...

Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system

We investigated the effect of hydrogen ion shower doping on polycrystallinesilicon thin‐film transistors (p‐Si TFTs). Hydrogen atoms were introduced to the channel region of p‐Si TFTs by PH3/H2 ion shower doping of the source/drain contact. Hydrogen concentration in the channel region can be controlled by altering the gate metal thickness. Hydrogen atoms affect the TFT’s threshold voltage shifts until it becomes negative, in n‐type TFTs. The threshold voltage shift depends on the hydrogen content of the channel region in p‐Si TFTs. This is explained by the existence of Si− 3 trap states in the grain boundaries.

U. Wakino

Papers

Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system

Effect of hydrogen ion shower doping in polycrystalline silicon thin‐film transistors