T
Thomas Schwarz-Selinger
Researcher at Max Planck Society
Publications - 200
Citations - 4075
Thomas Schwarz-Selinger is an academic researcher from Max Planck Society. The author has contributed to research in topics: Tungsten & Deuterium. The author has an hindex of 33, co-authored 186 publications receiving 3452 citations.
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Plasma chemical vapor deposition of hydrocarbon films: The influence of hydrocarbon source gas on the film properties
TL;DR: In this paper, a strong correlation was found between the hydrogen content of the films and the film properties, which was explained by the random-covalent network model, which is in contrast to a widely accepted study where no dependence of film properties on the source gas was observed, this being ascribed to a lost-memory effect.
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Quantification of the deuterium ion fluxes from a plasma source
TL;DR: In this paper, an electron-cyclotron-resonance plasma source with a biased sample holder was presented for the implantation of deuterium ions into tungsten, achieving achievable energies range from several electronvolts up to 200 eV per deuteron.
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Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces: Consequences for the formation of re-deposited layers in fusion experiments
TL;DR: The success of present-day fusion experiments relies on the use of a divertor which efficiently pumps impurities generated by erosion of the first wall as discussed by the authors, which is crucial for the performance of a next-step device, since the total lifetime before replacement strongly depends on the ability to control this re-deposition.
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Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces
TL;DR: In this article, the surface loss probability of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films is investigated by depositing films inside a cavity with walls made from silicon substrates.
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Micron-scale modifications of Si surface morphology by pulsed-laser texturing
TL;DR: In this article, the morphologies of Si surfaces are modified with single, tightly focused nanosecond laser pulses and characterized by atomic force microscopy (AFM) and quantitative comparison of theory and experiment is enabled by first removing the native oxide of Si with dilute HF acid.