Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to dramatically enhance chip performance, functionality, and device packing density. They also provide for microchip architecture and may facilitate the integration of heterogeneous materials, devices, and signals. However, before these advantages can be realized, key technology challenges of 3D ICs must be addressed. More specifically, the processes required to build circuits with multiple layers of active devices must be compatible with current state-of-the-art silicon processing technology. These processes must also show manufacturability, i.e., reliability, good yield, maturity, and reasonable cost. To meet these requirements, IBM has introduced a scheme for building 3D ICs based on the layer transfer of functional circuits, and many process and design innovations have been implemented. This paper reviews the process steps and design aspects that were developed at IBM to enable the formation of stacked device layers. Details regarding an optimized layer transfer process are presented, including the descriptions of 1) a glass substrate process to enable through-wafer alignment; 2) oxide fusion bonding and wafer bow compensation methods for improved alignment tolerance during bonding; 3) and a single-damascene patterning and metallization method for the creation of high-aspect-ratio (6:1 108 vias/cm2), and extremely aggressive wafer-to-wafer alignment (submicron) capability.

Three-dimensional integrated circuits

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A high-intensity light source is formed by a micro array of a semiconductor light source such as a LEDs, laser diodes, or VCSEL placed densely on a liquid or gas cooled thermally conductive substrate. The semiconductor devices are typically attached by a joining process to electrically conductive patterns on the substrate, and driven by a microprocessor controlled power supply. An optic element is placed over the micro array to achieve improved directionality, intensity, and/or spectral purity of the output beam. The light module may be used for such processes as, for example, fluorescence, inspection and measurement, photopolymerzation, ionization, sterilization, debris removal, and other photochemical processes.

High efficiency solid-state light source and methods of use and manufacture

A heat exchanger and method of manufacturing thereof comprises an interface layer for cooling a heat source. The interface layer is coupled to the heat source and is configured to pass fluid therethrough. The heat exchanger further comprises a manifold layer that is coupled to the interface layer. The manifold layer includes at least one first port that is coupled to a first set of individualized holes which channel fluid through the first set. The manifold layer includes at least one second port coupled to a second set of individualized holes which channel fluid through the second set. The first set of holes and second set of holes are arranged to provide a minimized fluid path distance between the first and second ports to adequately cool the heat source. Preferably, each hole in the first set is positioned a closest optimal distance to an adjacent hole the second set.

Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device

A vapor escape membrane for use in a heat exchanging device, including a heat pipe or heat sink that runs liquid into a cooling region positioned adjacent to the heat producing device, the vapor escape membrane comprising: a porous surface for removing vapor produced from the liquid in the cooling region, the membrane configured to confine the liquid only within the cooling region. The vapor escape membrane transfers vapor to a vapor region within the heat exchanging device, wherein the membrane is configured to prevent liquid in the cooling region from entering the vapor region. The membrane is configured to include a hydrophobic surface between the membrane and the cooling region, wherein the liquid in the cooling region does not flow through the porous surface. The vapor escape membrane includes a plurality of apertures for allowing vapor to transfer therethrough, each of the apertures having a predetermined dimension.

Vapor escape microchannel heat exchanger

Apparatus and methods according to the present invention preferably utilize electroosmotic pumps that are capable of generating high pressure and flow without moving mechanical parts and the associated generation of unacceptable electrical and acoustic noise, as well as the associated reduction in reliability. These electroosmotic pumps are preferably fabricated with materials and structures that improve performance, efficiency, and reduce weight and manufacturing cost relative to presently available micropumps. These electroosmotic pumps also preferably allow for recapture of evolved gases and deposited materials, which may provide for long-term closed-loop operation. Apparatus and methods according to the present invention also allow active regulation of the temperature of the device through electrical control of the flow through the pump and can utilize multiple cooling loops to allow independent regulation of the special and temporal characteristics of the device temperature profiles. Novel microchannel structures are also described.

Electroosmotic microchannel cooling system

Apparatus and methods according to the present invention utilize micropumps that are capable of generating high pressure and flow without moving mechanical parts and the associated generation of unacceptable electrical and acoustic noise, as well as the associated reduction in reliability. These micropumps are fabricated with materials and structures that improve performance, efficiency, and reduce weight and manufacturing cost relative to presently available micropumps. These micropumps also can allow for recapture of evolved gases and deposited materials, which may provide for long-term closed-loop operation. Apparatus and methods according to the present invention also allow active regulation of the temperature of the device through electrical control of the flow through the pump and can utilize multiple cooling loops to allow independent regulation of the spatial and temporal characteristics of the device temperature profiles. Novel enclosed microchannel structures are also described.

Closed-loop microchannel cooling system

CHAPTER 1 – Sensor Fundamentals

CHAPTER 19 – Strain Gages

An electroosmotic pump apparatus (300) that pumps a fluid having a liquid phase upon application of a voltage comprising: 
a fluid chamber (312) having a fluid inlet (322) and a fluid outlet (324); 
an anode (314) disposed within an anode chamber portion (312b); 
a cathode (316) disposed within a cathode chamber portion (312a); 
a porous structure (310) that provides electroosmotic pumping upon application of the voltage between the anode (314) and the cathode (316), the porous structure (310) creating a partition in the fluid chamber (312) between the anode chamber portion (312b) and the cathode chamber portion (312a); and a catalytic recombiner (326) integrated with the fluid chamber (312)

Thomas W. Kenny

Papers

Electroosmotic microchannel cooling system

Closed-loop microchannel cooling system

CHAPTER 1 – Sensor Fundamentals

CHAPTER 19 – Strain Gages

Electroosmotic pump apparatus