Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

(b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

The Quantum Theory of Light

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.

https://iopscience.iop.org/article/10.1088/0268-1242/18/4/201/pdf

Wide-bandgap semiconductor ultraviolet photodetectors

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.

Recent advances in Schottky barrier concepts

Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer

We present a comprehensive investigation of Raman-active modes of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) thin films deposited on H-passivated Si(111) substrates. The experimental data are interpreted with a density-functional tight-binding scheme used for calculating the geometry and vibrational modes of the isolated molecule. These results for the breathing modes are applied to the optical absorption of PTCDA in solution, and the vibrational absorption bands can be related quantitatively to the elongation of the most prominent Raman modes during the highest occupied molecular orbital to lowest unoccupied molecular orbital transition. From a comparison of the calculated deformation of negatively charged ${\mathrm{PTCDA}}^{\ensuremath{-}}$ with Raman spectra recorded in the region of the charge-transfer exciton, a significant net charge separation during the optical absorption is highly unlikely.

Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films

Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivity

https://tu-chemnitz.de/physik/hlph/publications/p_src/411.pdf

Transport gap of organic semiconductors in organic modified Schottky contacts

We have investigated electronic transport in hybrid organic/inorganic Schottky diodes. In order to derive from basic principles the transport properties of the organic semiconductors, we have use a two-dimensional drift-diffusion simulator which properly accounts for transport in both organic and inorganic layers. We have calculated the I–V characteristics of Ag/PTCDA/GaAs Schottky diodes as a function of PTCDA thickness and compared the results with experimental in situ measurements. The interplay between barrier height, PTCDA thickness, space-charge-limited current, and image charge is outlined.

/pdf/experimental-investigation-and-simulation-of-hybrid-organic-vrp7x1tvto.pdf

Thorsten U. Kampen

Papers

Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer

Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films

Schottky contacts on passivated GaAs(1 0 0) surfaces: barrier height and reactivity

Transport gap of organic semiconductors in organic modified Schottky contacts

Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes