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Reinhard Scholz

Researcher at Dresden University of Technology

Publications -  150
Citations -  5786

Reinhard Scholz is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Raman spectroscopy & Exciton. The author has an hindex of 39, co-authored 149 publications receiving 5242 citations. Previous affiliations of Reinhard Scholz include RWTH Aachen University & Chemnitz University of Technology.

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Empirical spds^* tight-binding calculation for cubic semiconductors : general method and material parameters

TL;DR: In this paper, an empirical tight-binding method for tetrahedrally coordinated cubic materials is presented and applied to group-IV and III-V semiconductors, and the method extends existing calculations by the inclusion of all five $d$ orbitals per atom in the basis set.
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A Self‐Consistent Charge Density‐Functional Based Tight‐Binding Method for Predictive Materials Simulations in Physics, Chemistry and Biology

TL;DR: Elstner et al. as mentioned in this paper proposed a self-consistent redistribution of Mulliken charges (SCC) approach to approximate the Kohn-Sham total energy in density functional theory with respect to charge density fluctuations.
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Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

TL;DR: In this paper, the free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum well lasers is investigated via a selfconsistent tight-binding approach.
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Band structure engineering in organic semiconductors

TL;DR: It is shown that continuous band energy tuning is indeed possible by varying the blend ratios of certain organic phthalocyanines and their fluorinated or chlorinated derivatives, and photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives.
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Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

TL;DR: In this paper, the free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum wells lasers is investigated via a selfconsistent tight-binding approach.