Tiantian Wei

TL;DR: A structure that decouples the gain medium and optical cavity is proposed, where the corresponding mechanism for the lasing wavelength shift is explained, and one kind of wavelength continuously variable lasers is achieved on a single GaN/InGaN core-shell microrod without modifying the geometry of the resonant cavity or cutting the micRORod.

TL;DR: An advanced epitaxial lateral overgrowth (ELOG) structure named "serpentine-channels masked Si(111) substrate" has been introduced, which only has one high-defect region per period compared with the conventional ELOG method as mentioned in this paper.

TL;DR: In this article, the electronic structure and optical properties of CN point defects on the sidewall surface of [0,0, 0,1]-oriented GaN nanowires were calculated.

TL;DR: In this paper, a novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time.

TL;DR: It is found and proved that the position of the active region plays a key role in determining the lasing mode of MNW lasers, which can be used to realize single-mode lasing in MNWs, and proposed self-selection mechanism of Fabry-Pérot MNW cavity for single- mode lasing due to location-dependent field distribution in M NWs.