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Timo Rahkonen

Researcher at University of Oulu

Publications -  261
Citations -  3420

Timo Rahkonen is an academic researcher from University of Oulu. The author has contributed to research in topics: Amplifier & CMOS. The author has an hindex of 23, co-authored 245 publications receiving 3144 citations. Previous affiliations of Timo Rahkonen include Nokia & Information Technology University.

Papers
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Journal ArticleDOI

Measurement technique for characterizing memory effects in RF power amplifiers

TL;DR: In this paper, a three-tone test setup is constructed to measure the phase of third-order intermodulation distortion products, and the measured results for a bipolar junction transistor and a MESFET amplifier are presented.
Book

Distortion in RF power amplifiers

J. Vuolevi, +1 more
TL;DR: The Volterra Model is applied to memory effects in RF Power Amplifiers to derive Equations for Cascaded 2nd-Order Distortion Mechanisms.
Journal ArticleDOI

The use of stabilized CMOS delay lines for the digitization of short time intervals

TL;DR: In this paper, the basic advantages and limitations of using integrated digital CMOS delay lines for the digitization of short time intervals are discussed, and the accuracy of 6-7 b and single-shot resolutions from 0.1 to 10 ns are demonstrated.
Proceedings ArticleDOI

Measurement technique for characterizing memory effects in RF power amplifiers

TL;DR: In this article, electrical and electro-thermal causes for memory effects, including resonance type phase jumps caused by partially cancelling distortion mechanisms, were described and measured. And the phase of IM3 distortion products was constructed, and the measured results are presented in this paper.
Journal ArticleDOI

A CMOS Time-to-Digital Converter (TDC) Based On a Cyclic Time Domain Successive Approximation Interpolation Method

TL;DR: A time-to-digital converter with ~1.2 ps resolution and ~327 mus dynamic range suitable for laser range-finding application for example and an external integral nonlinearity look-up table (INL-LUT) for the interpolators is described.