/pdf/new-approaches-to-nanofabrication-molding-printing-and-other-9d730ga5zp.pdf

New approaches to nanofabrication: molding, printing, and other techniques.

Interpretation of X-ray Powder Diffraction Patterns . By H. Lipson and H. Steeple. Pp. viii + 335 + 3 plates. (Mac-millan: London; St Martins Press: New York, May 1970.) £4.

X-Ray Diffraction

Nanoimprint lithography (NIL) is a nonconventional lithographic technique for high-throughput patterning of polymer nanostructures at great precision and at low costs. Unlike traditional lithographic approaches, which achieve pattern definition through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist material and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional techniques. This Review covers the basic principles of nanoimprinting, with an emphasis on the requirements on materials for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication.

/pdf/nanoimprint-lithography-methods-and-material-requirements-csc83swyi1.pdf

Nanoimprint Lithography: Methods and Material Requirements**

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

The nanometer-scale architectures in thin films of self-assembling block copolymers have inspired a variety of new applications. For example, the uniformly sized and shaped nanodomains formed in the films have been used for nanolithography, nanoparticle synthesis, and high-density information storage media. Imperative to all of these applications, however, is a high degree of control over orientation of the nanodomains relative to the surface of the film as well as control over order in the plane of the film. Induced fields including electric, shear, and surface fields have been demonstrated to influence orientation. Both heteroepitaxy and graphoepitaxy can induce positional order on the nanodomains in the plane of the film. This article will briefly review a variety of mechanisms for gaining control over block copolymer order as well as many of the applications of these materials. Particular attention is paid to the potential of perfecting long-range two-dimensional order over a broader range of length scales and the extension of these concepts to functional materials and more complex architectures.

/pdf/patterning-with-block-copolymer-thin-films-5gldelhkf5.pdf

Patterning with block copolymer thin films

A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.

Structure resulting from chemical shrink process over BARC (bottom anti-reflective coating)

Integrated Circuit (IC) technology is changing in multiple ways: 193i to EUV exposure, planar to non-planar device architecture, from single exposure lithography to multiple exposure and DSA patterning etc. Critical dimension (CD) control requirement is becoming stringent and more exhaustive: CD and process window are shrinking., three sigma CD control of < 2 nm is required in complex geometries, and metrology uncertainty of < 0.2 nm is required to achieve the target CD control for advanced IC nodes (e.g. 14 nm, 10 nm and 7 nm nodes). There are fundamental capability and accuracy limits in all the metrology techniques that are detrimental to the success of advanced IC nodes. Reference or physical CD metrology is provided by CD-AFM, and TEM while workhorse metrology is provided by CD-SEM, Scatterometry, Model Based Infrared Reflectrometry (MBIR). Precision alone is not sufficient moving forward. No single technique is sufficient to ensure the required accuracy of patterning. The accuracy of CD-AFM is ~1 nm and precision in TEM is poor due to limited statistics. CD-SEM, scatterometry and MBIR need to be calibrated by reference measurements for ensuring the accuracy of patterned CDs and patterning models. There is a dire need of measurement with < 0.5 nm accuracy and the industry currently does not have that capability with inline measurments. Being aware of the capability gaps for various metrology techniques, we have employed data processing techniques and predictive data analytics, along with patterning simulation and metrology models, and data integration techniques to selected applications demonstrating the potential solution and practicality of such an approach to enhance CD metrology accuracy. Data from multiple metrology techniques has been analyzed in multiple ways to extract information with associated uncertainties and integrated to extract the useful and more accurate CD and profile information of the structures. This paper presents the optimization of scatterometry and MBIR model calibration and feasibility to extrapolate not only in design and process space but from one process step to a previous process step. Well calibrated scatterometry model or patterning simulation model can be used to accurately extrapolate and interpolate in the design and process space for lithography patterning where AFM is not capable to accurately measure sub-40 nm trenches. Uncertainty associated with extrapolation can be large and needs to be minimized. We have made use of measurements from CD-SEM and CD-AFM, along with the patterning and scatterometry simulation models to estimate the uncertainty associated with extrapolation and methods to reduce it. First time we have reported the application of machine learning (Artificial Neural Networks) to the resist shrinkage systematic phenomenon to accurately predict the preshrink CD based on supervised learning using the CD-AFM data. The study lays out various basic concepts, approaches and protocols of multiple source data processing and integration for hybrid metrology approach. Impacts of this study include more accurate metrology, patterning models and better process controls for advanced IC nodes.

Leveraging data analytics, patterning simulations and metrology models to enhance CD metrology accuracy for advanced IC nodes

Modern semiconductor fabrication pushes the limits of chemistry and physics while simultaneously employing largescale, cutting-edge processing techniques. While fab expansion and capital expenditures continue to grow, the human element has become ever more demanding and prone to error. To assist with this issue, computer-aided process engineering, process control, and tool monitoring will continue to rise in the coming years. In this paper, we present an APC-integrated, customizable solution to an in-fab processing segment. Through machine learning, we combine information from design-specific extracted features with processing and metrology data to predict oxide deposition thickness. The result is a design-aware augmentation for current metrology that can recommend accurate process recipe conditions for new layouts. We also present experimental results highlighting the benefits of adding design-aware features with in-fab data to anchor and support each other across layouts and technologies. This result paves the way to decouple, isolate, and quantify the individual influences each processing step imposes on different designs at various stages of the fabrication flow.

Design-aware virtual metrology and process recipe recommendation

The present invention pertains to disposing a diamond-like composition on a template, wherein the diamond-like composition acts as a release layer. The diamond-like composition is substantially transparent to actinic radiation, e.g., ultraviolet (UV) light, and will also have a desired surface energy, wherein the desired surface energy minimizes adhesion between the template and an underlying material disposed on a substrate. The diamond-like composition is characterized with a low surface energy that exhibits desirable release characteristics

Release layer comprising diamond-like carbon (dlc) or doped dlc with tunable composition

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.

Todd Bailey

Papers

Structure resulting from chemical shrink process over BARC (bottom anti-reflective coating)

Leveraging data analytics, patterning simulations and metrology models to enhance CD metrology accuracy for advanced IC nodes

Design-aware virtual metrology and process recipe recommendation

Release layer comprising diamond-like carbon (dlc) or doped dlc with tunable composition

Mask having implant stopping layer