R
Ryan Deschner
Researcher at University of Texas at Austin
Publications - 21
Citations - 642
Ryan Deschner is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 9, co-authored 21 publications receiving 590 citations. Previous affiliations of Ryan Deschner include IBM & TSMC.
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Journal ArticleDOI
High-throughput sequencing of the paired human immunoglobulin heavy and light chain repertoire.
Brandon J. DeKosky,Gregory C. Ippolito,Ryan Deschner,Jason J. Lavinder,Yariv Wine,Brandon M. Rawlings,Navin Varadarajan,Claudia Giesecke,Thomas Dörner,Sarah F. Andrews,Patrick C. Wilson,Scott Patrick Hunicke-Smith,C. Grant Willson,Andrew D. Ellington,George Georgiou +14 more
TL;DR: The fidelity of VH:VL pairs identified by this approach were validated and the method was used to sequence the repertoire of three human cell subsets—peripheral blood IgG+ B cells, peripheral plasmablasts isolated after tetanus toxoid immunization and memory B cells isolated after seasonal influenza vaccination.
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Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography
Satoshi Takei,Satoshi Takei,Satoshi Takei,Tsuyoshi Ogawa,Ryan Deschner,Kane Jen,Takayasu Nihira,Makoto Hanabata,C. Grant Willson +8 more
TL;DR: In this article, the authors used a spin-on hard mask underlayer material with high adhesion by reacting methacrylate groups of the underlayer to the acrylate group of resist material during ultraviolet irradiation.
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Reduction of pattern peeling in step-and-flash imprint lithography
TL;DR: In this article, a strong adhesion force between resist and underlayer materials was employed to reduce resist pattern peeling generated from de-molding in step-and-flash imprint lithography (SFIL), while simultaneously minimizing the adhesion forces between resist material and the template surface with fluorinated surfactants.
Journal ArticleDOI
Advanced step and flash nanoimprint lithography using UV-sensitive hard mask underlayer material
TL;DR: In this article, a spin-on UV-sensitive hard mask underlayer material with terminal methacrylate groups has been developed successfully, in order to obtain high adhesion by radical polymerisation between the resist and underlayer during UV irradiation.
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Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond
Greg McIntyre,Michael S. Hibbs,Jaione Tirapu-Azpiroz,Geng Han,Scott Halle,Tom Faure,Ryan Deschner,Brad Morgenfeld,Sridhar Ramaswamy,Alfred Wagner,T. Brunner,Yasutaka Kikuchi +11 more
TL;DR: In this article, a new type of binary mask blank consisting of an opaque layer of MoSi on a glass substrate, referred to simply as OMOG, was discussed and compared to a previous chrome/MoSi/glass binary intensity mask (BIM) blank.