scispace - formally typeset
R

Ryan Deschner

Researcher at University of Texas at Austin

Publications -  21
Citations -  642

Ryan Deschner is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 9, co-authored 21 publications receiving 590 citations. Previous affiliations of Ryan Deschner include IBM & TSMC.

Papers
More filters
Journal ArticleDOI

High-throughput sequencing of the paired human immunoglobulin heavy and light chain repertoire.

TL;DR: The fidelity of VH:VL pairs identified by this approach were validated and the method was used to sequence the repertoire of three human cell subsets—peripheral blood IgG+ B cells, peripheral plasmablasts isolated after tetanus toxoid immunization and memory B cells isolated after seasonal influenza vaccination.
Journal ArticleDOI

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

TL;DR: In this article, the authors used a spin-on hard mask underlayer material with high adhesion by reacting methacrylate groups of the underlayer to the acrylate group of resist material during ultraviolet irradiation.
Journal ArticleDOI

Reduction of pattern peeling in step-and-flash imprint lithography

TL;DR: In this article, a strong adhesion force between resist and underlayer materials was employed to reduce resist pattern peeling generated from de-molding in step-and-flash imprint lithography (SFIL), while simultaneously minimizing the adhesion forces between resist material and the template surface with fluorinated surfactants.
Journal ArticleDOI

Advanced step and flash nanoimprint lithography using UV-sensitive hard mask underlayer material

TL;DR: In this article, a spin-on UV-sensitive hard mask underlayer material with terminal methacrylate groups has been developed successfully, in order to obtain high adhesion by radical polymerisation between the resist and underlayer during UV irradiation.
Journal ArticleDOI

Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond

TL;DR: In this article, a new type of binary mask blank consisting of an opaque layer of MoSi on a glass substrate, referred to simply as OMOG, was discussed and compared to a previous chrome/MoSi/glass binary intensity mask (BIM) blank.