T
Tokuo Kure
Researcher at Hitachi
Publications - 184
Citations - 3602
Tokuo Kure is an academic researcher from Hitachi. The author has contributed to research in topics: Etching (microfabrication) & Transistor. The author has an hindex of 32, co-authored 184 publications receiving 3583 citations. Previous affiliations of Tokuo Kure include Renesas Electronics.
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Dry etching by alternately etching and depositing
TL;DR: In this article, a dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction is suspended.
Journal ArticleDOI
Single-electron memory for giga-to-tera bit storage
Kazuo Yano,Tomoyuki Ishii,T. Sano,Toshiyuki Mine,Fumio Murai,Takayuki Hashimoto,T. Kobayashi,Tokuo Kure,Koichi Seki +8 more
TL;DR: These are the key issues which one inevitably encounters when one tries to achieve giga-to-tera bit memory integration and its positioning among various memory architectures.
Single-electron memory for giga-to-tera bit storage : Special issue on quantum devices and their applications
Kazuo Yano,Tomoyuki Ishii,T. Sano,Toshiyuki Mine,Fumio Murai,Takayuki Hashimoto,T. Kobayashi,Tokuo Kure,Koichi Seki +8 more
TL;DR: In this paper, the authors address the key issues which one inevitably encounters when one tries to achieve giga-to-tera bit memory integration, including room-temperature operation, memory-cell architecture, sensing scheme, cell-design guideline, use of nanocrystalline silicon versus lithography, array architecture, device to device variations, read/write error rate, and its positioning among various memory architectures.
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A semi-static complementary gain cell technology for sub-1 V supply DRAM's
TL;DR: In this article, a semi-static complementary gain cell for low power DRAM's is proposed and experimentally demonstrated, which consists of a write-transistor and its opposite conduction type read-transistors with a heating gate as a storage node which causes a shift in the threshold voltage.
Journal ArticleDOI
Low‐temperature dry etching
TL;DR: In this article, a low-temperature electron-cyclotron-resonance microwave plasma etching and reactive ion beam etching were described for ULSI device fabrication.