T
Tomohiro Kubo
Researcher at Fujitsu
Publications - 48
Citations - 451
Tomohiro Kubo is an academic researcher from Fujitsu. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 11, co-authored 48 publications receiving 445 citations.
Papers
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Patent
Semiconductor device having shallow b-doped region and its manufacture
TL;DR: In this article, a method for manufacturing a semiconductor device which can dope boron (B) shallowly and at a high concentration is provided, which can be used to construct a high temperature semiconductor.
Patent
Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
H. Fukutome,Tomohiro Kubo +1 more
TL;DR: In this article, each of the side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate, and each of these surfaces is formed by a gate insulating film and a gate electrode.
Journal ArticleDOI
Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs
TL;DR: In this article, the impact of gate line edge roughness on two-dimensional carrier profiles in sub-50-nm n-MOSFETs was directly evaluated using scanning tunneling microscopy (STM).
Proceedings ArticleDOI
Ultra-low contact resistance for deca-nm MOSFETs by laser annealing
K. Goto,T. Yamamoto,Tomohiro Kubo,Masataka Kase,Yun Wang,Tengshing Lin,S. Talwar,Toshihiro Sugii +7 more
TL;DR: In this article, the authors demonstrate an ultra-low contact resistance of 4/spl times/10/sup -8/ /spl Omega/-cm/sup 2/ (5/pl times/ lower than RTA) using a laser annealing (LA) process.
Proceedings ArticleDOI
Junction Profile Engineering with a Novel Multiple Laser Spike Annealing Scheme for 45-nm Node High Performance and Low Leakage CMOS Technology
T. Yamamoto,Tomohiro Kubo,Takae Sukegawa,E. Takii,Y. Shimamune,Naoyoshi Tamura,Tsunehisa Sakoda,Makoto Nakamura,Hiroyuki Ohta,T. Miyashita,H. Kurata,S. Satoh,Masataka Kase,Toshihiro Sugii +13 more
TL;DR: In this article, the authors developed a junction profile engineering that uses a newly developed multiple laser spike annealing scheme and applied it to 45-nm node high performance and low leakage CMOS technology.