T
Toru Takayama
Publications - 7
Citations - 252
Toru Takayama is an academic researcher. The author has contributed to research in topics: Substrate (electronics) & Crystalline silicon. The author has an hindex of 4, co-authored 7 publications receiving 252 citations.
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Patent
Semiconductor device method for producing the same and liquid crystal display including the same
TL;DR: In this article, a liquid crystal display device including a display section including a liquid-crystal layer, pixel electrodes located in a matrix on one of the pair of substrates, a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes, and a peripheral driving circuit located for driving the display section, the peripheral drive circuit being located on the substrate on which the first thin-film transistors are located and having a second thin film transistor.
Patent
Method and an apparatus for fabricating a semiconductor device
TL;DR: In this paper, a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surfaces, a predetermined under-heating portion of the semiconductor is partially heated with a heating source emitting heating rays.
Patent
Method of fabricating a thin film transistor
TL;DR: In this paper, a semiconductor device comprising a substrate having thereon an amorphous silicon film fabricated by a reduced pressure chemical vapor deposition is characterized in that a thin film transistor is provided by using a crystalline silicon film obtained by effecting crystal growth in parallel with the surface of the substrate at the periphery of a region containing a selectively introduced metallic element.
Patent
Semiconductor device and process for fabricating same
TL;DR: In this article, a semiconductor device comprising a substrate having thereon an amorphous silicon film fabricated by a reduced pressure chemical vapor deposition is characterized in that a thin film transistor is provided by using a crystalline silicon film obtained by effecting crystal growth in parallel with the surface of the substrate at the periphery of a region containing a selectively introduced metallic element.
Patent
Method and apparatus for mfg. of semiconductor device
TL;DR: In this paper, a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surfaces, a predetermined under-heating portion of the semiconductor is partially heated with a heating source emitting heating rays.