Toshihiko Fujii

Abstract: PROBLEM TO BE SOLVED: To provide a resist underlayer film material which is for a multilayer resist process, especially for a double layer resist process or a triple layer resist process, which functions as an excellent antireflection film especially against exposure with short wavelength light, that is, having high transparency and most suitable n and k values, and further is excellent in etching resistance in substrate working. SOLUTION: The resist underlayer film material which is for a multilayer resist film to be used in lithography, and is characterized by containing at least a compound having a bisnaphthol group and a novolac resin produced therefrom, is provided. COPYRIGHT: (C)2007,JPO&INPIT

TL;DR: In this article, a resist pattern forming method using the same and suitable for immersion lithography with ArF excimer laser light (193 nm) was proposed. But the method was not suitable for the case of multilayer resist film.

TL;DR: In this paper, a resist pattern is formed by forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C, followed by exposure and development, there is formed a resist patterns having an undercut of desired configuration.

TL;DR: In this article, a resist undercoat film substrate is provided, which is formed by using the resist under-coat film material, which has the function to neutralize an amine-based contaminant from a substrate to reduce adverse effect such as a resist pattern footing on an overcoat resist.

TL;DR: In this paper, the resist undercoat material of a multilayer resist film used in lithography is used to provide a pattern on a substrate by using the same polymer having a repeating unit represented by general formula.