An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

PROBLEM TO BE SOLVED: To provide a resist material that has high resolution and also high sensitivity, achieves a favorable pattern profile after exposure to light and causes small line edge roughness,a chemically amplified positive resist material that has electrically conductive features and prevents charge-up during drawing, and a pattern forming method using the material.SOLUTION: The resist material is obtained by compounding a 1-20C mono- to tetra-valent carboxylate of metal selected from sodium, magnesium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, cadmium, indium, tin, antimony, cesium, zirconium and hafnium, or a complex of the metal and β-diketones, into a resist material containing an acid generator and a polymeric compound prepared by (co)polymerization of a repeating unit of (meth)acrylate, styrene carboxylic acid or vinylnaphthalene carboxylic acid substituted with an acid-labile group and/or a repeating unit having a phenolic hydroxyl group substituted with an acid-labile group. The resist material shows significantly high contrast in an alkali dissolution rate before and after exposure, has high sensitivity and high resolution, gives a favorable pattern profile, and moreover suppresses an acid diffusion rate and causes small line edge roughness.

Resist material and pattern forming method using the same

PROBLEM TO BE SOLVED: To provide an antireflection film material having an excellent antireflection effect against exposure at short wavelength, a high etching selection ratio, that is, having a sufficiently fast etching rate with respect to a photoresist film, and having a sufficiently slow etching rate compared to the substrate to be processed, and capable of producing a perpendicular profile of a resist pattern to be formed in the photoresist film on the antireflection film. SOLUTION: The antireflection film material to be used for lithography contains at least a polymer compound having a repeating unit by the copolymerization expressed by general formula (1), or a polymer compound having a repeating unit by the copolymerization expressed by general formula (2) and a polymer compound having a repeating unit by the copolymerization expressed by general formula (3). COPYRIGHT: (C)2005,JPO&NCIPI

Antireflection film material, substrate having antireflection film and method for forming pattern

PROBLEM TO BE SOLVED: To provide an antireflection film material having an excellent antireflection effect on exposure at short wavelengths, having a high etching selection ratio and showing little changes in the film thickness even in long-term storage. SOLUTION: The antireflection film material to be used for lithography comprises: an antireflection silicone resin containing at least an organic group having a carbon-oxygen single bond and/or a carbon-oxygen double bond, a light-absorbing group and silicon atoms having Si-OH and/or Si-OR at an end; an organic solvent containing at least one kind or more of ether bond, carbonyl bond and ester bond in the molecule and having one or more hydroxyl groups; and an acid generating agent. Further, the organic solvent containing at least one kind or more of ether bond, carbonyl bond and ester bond in the molecule and having one or more hydroxyl groups is included by 60 mass% or more of the whole organic solvent. COPYRIGHT: (C)2007,JPO&INPIT

Antireflection film material, substrate having antireflection film and pattern forming method

PROBLEM TO BE SOLVED: To provide a resist underlayer film forming material which is effective as an antireflection film material used in microfabrication in a production process of a semiconductor device or the like, and a resist pattern forming method using the same and suitable for immersion lithography with ArF excimer laser light (193 nm). SOLUTION: The resist underlayer film material of a multilayer resist film used in lithography is obtained by blending at least a high molecular compound represented by formula (1) and having a mass average molecular weight in a range of 1,000-100,000 and an extinction coefficient (an imaginary value of a refractive index; k value) at 193 nm wavelength in a range of 0.10-0.38, and one or more compounds selected form blended phenol low-nucleus bodies and phenol fullerenes and having an extinction coefficient (an imaginary value of a refractive index; k value) at 193 nm wavelength in a range of 0.4-1.1, wherein R 1 and R 5 are independently a hydrogen atom or a methyl group; R 2 and R 3 are a hydrogen atom, R 2 and R 3 may bond to each other to form a methylene group; R 4 and R 6 are independently a hydrogen atom, a glycidyl group or an acid-labile group; m and n are a positive number of 1-4; and a1, a2 and b are a positive number, provided that 0≤a1/(a1+a2+b)≤0.3, 0≤a2/(a1+a2+b)≤0.5, 0 COPYRIGHT: (C)2009,JPO&INPIT

Resist underlayer film material and pattern forming method using the same

PROBLEM TO BE SOLVED: To provide a thermosetting silicon-containing film-forming composition enabling good pattern formation of a photoresist film. SOLUTION: The thermosetting silicon-containing film-forming composition comprises (A) a silicon-containing compound obtained through a step for substantially removing an acid catalyst from a reaction mixture obtained by carrying out hydrolytic condensation of a hydrolyzable silicon compound by using a compound selected from an inorganic acid and a sulfonic acid derivative as the acid catalyst, (B) a compound represented by formula (1): L a H b X (wherein L is Li, Na, K, Rb or Cs; X is OH or an organic acid group; a is ≥1, b is 0 or ≥1 and a+b is a valence of a hydroxy group or an organic acid group) or a compound represented by formula (2): MA (wherein M is a sulfonium, iodonium or ammonium; A is non-nucleophilic counter ion), (C) a 1-30C organic acid and (D) an organic solvent. COPYRIGHT: (C)2008,JPO&INPIT

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

PROBLEM TO BE SOLVED: To provide a composition for forming a metal oxide-containing film that forms a good pattern by using a metal oxide-containing intermediate film formed of the composition. SOLUTION: The composition for forming a thermosetting metal oxide-containing film comprises (A) a metal oxide-containing compound obtained by hydrolytic condensation of a compound of formula (1) and a compound of formula (2), (B) a compound of formula (3) or (4), (C) an organic acid, and (D) an organic solvent. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1). In the formula, R is an alkyl group; R 1 -R 3 are each H or a monovalent organic group; m1-m3 are each 0 or 1; and m1+m2+m3 is 0-3. U(OR 4 ) m4 (OR 5 ) m5 (2). In the formula, R 4 and R 5 are each an organic group; m4 and m5 are each an integer of at least 0; and U is a group III-V element of the periodic table. L a H b X (3). In the formula, L is Li, Na, K, Rb or Cs; X is a hydroxy group or an organic acid group; a is an integer of at least 1; b is 0 or an integer of at least 1; and a+b is a valence number of the hydroxy group or the organic acid group. M a H b A (4). In the formula, M is sulfonium, iodonium or ammonium; A is X or a non-nucleophilic counterion; a is an integer of at least 1; and b is 0 or an integer of at least 1. COPYRIGHT: (C)2009,JPO&INPIT

Composition for forming metal oxide-containing film, metal oxide-containing film, substrate having metal oxide-containing film formed thereon, and pattern formation method using the same

勤荻原

Papers

Antireflection film material, substrate having antireflection film and method for forming pattern

Antireflection film material, substrate having antireflection film and pattern forming method

Resist underlayer film material and pattern forming method using the same

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

Composition for forming metal oxide-containing film, metal oxide-containing film, substrate having metal oxide-containing film formed thereon, and pattern formation method using the same

勤 荻原

Papers

Antireflection film material, substrate having antireflection film and method for forming pattern

Antireflection film material, substrate having antireflection film and pattern forming method

Resist underlayer film material and pattern forming method using the same

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

Composition for forming metal oxide-containing film, metal oxide-containing film, substrate having metal oxide-containing film formed thereon, and pattern formation method using the same

勤荻原