Showing papers by "Toshihiko Kosugi published in 1993"
TL;DR: In this paper, the surface becomes As rich after the etch with the composition depending on the etching condition, and the thickness of the surface altered layer extends 7-20 nm depending on beam energy.
Abstract: Ion beam assisted etching of GaAs has been performed by continuous and pulsed Ga focused ion beam irradiation in Cl2 atmosphere, and etch yield and surface composition have been measured as a function of beam energy and Cl2 flux. It was observed that pulsed irradiation results in a 10 times or more higher etching rate than continuous irradiation. From Auger electron spectroscopy, it was observed that the surface becomes As rich after the etching with the composition depending on the etching condition. The thickness of the surface altered layer extends 7–20 nm depending on the beam energy. These results are discussed based on rate equations.
5 citations
TL;DR: In this paper, the characteristics of ion-beam-assisted etching of GaAs by continuous and pulsed Ga+ beam irradiation in Cl2 ambient were investigated and a rate equation model was proposed to explain the measured etch yield.
Abstract: We have investigated the characteristics of ion-beam-assisted etching of GaAs by continuous and pulsed Ga+ beam irradiation in Cl2 ambient. A rate equation model was proposed to explain the measured etch yield. Due to pulsed beam irradiation, the etch yield increased to 500 atoms/ion with decreasing pulse duty ratio. This increase was explained by the accumulation of GaCl3 on the surface while the ion beam is off based on the rate equation model.
3 citations
TL;DR: In this paper, the characteristics of ion beam assisted etching of GaAs by continuous and pulsed Ga + beam irradiation in a Cl 2 ambient were investigated and a rate equation model was proposed to explain the measured etch yield.
1 citations