We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

This paper revies the preparation and properties of hard forms of amorphous carbon and hydrogenated amorphous carbon, often known as diamond-like carbon. Properties such as the hydrogen content, sp 3 content, optical gap, refractive index, hardness, elastic modulus and friction and their dependence on the deposition conditions are described. Models of the electronic structure and mechanical properties are used to relate the physical properties to the atomic structure.

Properties of diamond-like carbon

Hard amorphous (diamond-like) carbons

Wide bandgap GaN has long been sought for its applications to blue and UV emitters and high temperature/high power electronic devices. Recent introduction of commercial blue and blue-green LED's have led to a plethora of activity in all three continents into the heterostructures based on GaN and its alloys with AlN and InN. In this review, the status and future prospects of emerging wide bandgap gallium nitride semiconductor devices are discussed. Recent successes in p-doping of GaN and its alloys with InN and AlN, and in n-doping with much reduced background concentrations have paved the way for the design, fabrication, and characterization of devices such as MESFET's, MISFET's, HBT's, LED's, and optically pumped lasers. We discuss the electrical properties of these devices and their drawbacks followed by future prospects. After a short elucidation of materials characteristics of the nitrides, we explore their electrical transport properties in detail. Recent progress in processing such as formation of low-resistance ohmic contacts and etching is also presented. The promising features of quarternaries and double heterostructures in relation to possible current injection lasers, LED's, and photodetectors are also elaborated on. >

Emerging gallium nitride based devices

Diamond-like carbon — present status

A carbon film was deposited by mass‐separated negative‐carbon‐ion‐beam deposition in the energy range of 25–1000 eV. The carbon film deposited by a C− ion beam was optically transparent (the maximum optical gap was 0.96 eV) and served as an electrical insulator (the maximum electrical resistivity was 1.5×108 Ω cm). The film property strongly depended on the ion‐beam energy for deposition and, the film obtained at the deposition energy of 115–215 eV was the most transparent and the best insulator. Its atomic density was also the highest and was almost the same as that of diamond. The carbon film deposited at room temperature was amorphous and showed no IR absorption. On the other hand, the film deposited at a substrate temperature of 800 °C showed graphitelike rings in reflection high‐energy electron‐diffraction patterns and an IR absorption such as graphite. Its electrical resistivity was much lower. The property of the film deposited by a C−2 ion beam was more strongly dependent on the ion‐beam energy th...

Transparent carbon film prepared by mass‐separated negative‐carbon‐ion‐beam deposition

We describe a form of deposition in which material is vaporized in a crucible and the vapor then ejected through a fine nozzle at the focus of an electron beam in a high vacuum. The vapor, on emerging from the nozzle, is partially condensed into clusters that are ionized by electron bombardment and then accelerated onto the substrate. The deposited films show good adhesion and large crystallite size. Examples include the deposition of Cu onto glass, Si onto Si, and ZnS onto NaCl.

Ionized cluster beam deposition

Ionized cluster beam deposition offers the capability of introducing useful kinetic energy and chemical activity during film formation processes. This allows high quality epitaxy of materials at low temperature onto a wide variety of substrate surfaces and even permits the formation of thin film materials not previously possible. Capabilities are demonstrated by epitaxial Al films on various kinds of substrates, very large area deposition of GaAs, composition controlled Cd1−xMnxTe films, and CdTe/PbTe multilayer epitaxial films.

Low temperature epitaxy by ionized‐cluster beam

Very uniform In0.53Ga0.47As was grown on InP by liquid phase epitaxy. The electron mobility is 8450 cm2/V sec at 300 K and 27700 cm2/V sec at 77 K. The mobility increases with decreasing temperature from 300 to 77 K in contrast to the results of In1−xGaxAs grown directly on GaAs by vapor phase epitaxy. The energy gap of this high‐mobility material is 0.750 eV at room temperature.

Toshinori Takagi

Papers

Transparent carbon film prepared by mass‐separated negative‐carbon‐ion‐beam deposition

Ionized cluster beam deposition

Low temperature epitaxy by ionized‐cluster beam

Electron mobility and energy gap of In0.53Ga0.47As on InP substrate

Vaporized-metal cluster formation and ionized-cluster beam deposition and epitaxy☆