T
Toshio Seki
Researcher at Kyoto University
Publications - 169
Citations - 2181
Toshio Seki is an academic researcher from Kyoto University. The author has contributed to research in topics: Ion & Ion beam. The author has an hindex of 24, co-authored 168 publications receiving 2070 citations. Previous affiliations of Toshio Seki include Shinshu University & Hitachi.
Papers
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Journal ArticleDOI
Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams.
Satoshi Ninomiya,Kazuya Ichiki,Hideaki Yamada,Yoshihiko Nakata,Toshio Seki,Takaaki Aoki,Jiro Matsuo +6 more
TL;DR: Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials.
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Measurements of secondary ions emitted from organic compounds bombarded with large gas cluster ions
TL;DR: In this article, the authors proposed to use cluster ions that are much larger than the molecular ions as primary ions for organic secondary ion mass spectrometry, and they measured secondary ions for a thin arginine film target (200nm) bombarded with large Ar cluster ions using a time-of-flight technique.
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Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams
Satoshi Ninomiya,Kazuya Ichiki,Hideaki Yamada,Yoshihiko Nakata,Toshio Seki,Takaaki Aoki,Jiro Matsuo +6 more
TL;DR: The results prove the great potential of large gas cluster ion beams for molecular depth profiling of organic multilayer samples and the effect of temperature on the diffusion of these materials.
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Nano-Processing with Gas Cluster Ion Beams
TL;DR: The fundamental principles and experimental status of gas cluster ion beam (GCIB) processing are described in this paper, and a review of the theoretical and experimental characteristics of new GCIB processes and related equipment development is presented.
Nano processing with gas cluster ion beams
TL;DR: A review of the theoretical and experimental characteristics of new gas cluster ion bombardment processes and related equipment development is presented in this article, where the fundamental principles and experimental status of GCIB processing are described as a new technique with promise for practical industrial applications.