Toshiyuki Ono

TL;DR: In this article, a Schottky barrier diode with high breakdown voltage and a large current where a leakage current in an opposite direction is reduced by forming a second conductivity type first surface layer with large depth and mutual interval and a secondconductivity type second surface layer of second SiC semiconductor substrate on the main surface of a first conductivity-type SiC polysilicon substrate.

TL;DR: In this article, a SiC Schottky diode with a reverse voltage stop characteristic is presented, which is improved without increasing voltage drop at conducting current in the forward direction and withstand voltage and has current heavy.

TL;DR: In this paper, an FET transistor employing a hexagonal system silicon carbide as a material, and fabrication method thereof, in which high power conversion capacity is realized by reducing the source-drain leak current when the gate voltage is turned OFF and decreasing the electric resistance when the gating voltage was turned ON.

TL;DR: In this article, the authors proposed a parallel-plate single-crystal silicon carbide semiconductor substrate with main surfaces on its top and bottom sides, a low-resistance n+-type drain layer 2 and an n--type drift layer 3 having higher resistance than the layer 2 has are laminated upon another.

TL;DR: In this article, the authors proposed a CVD method composed of a step of first vacuum baking during time intervals t1-t6, a step hydrogen purge during time interval t6-t8, a SiC/Si coating during time intervals t8-t11, vacuum evacuation during time Intervals t11-t13, second vacuum baking and wafer loading during Time Interval t13-t18, and epitaxial growing during Time interval t20-t25.