Y
Yuzo Kozono
Researcher at Hitachi
Publications - 49
Citations - 551
Yuzo Kozono is an academic researcher from Hitachi. The author has contributed to research in topics: Layer (electronics) & Oxide. The author has an hindex of 11, co-authored 49 publications receiving 548 citations.
Papers
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Journal ArticleDOI
X-ray photoelectron spectroscopy analyses of lithium intercalation and alloying reactions on graphite electrodes
Hideto Momose,Hidetoshi Honbo,Seiji Takeuchi,Katsunori Nishimura,Tatsuo Horiba,Yasushi Muranaka,Yuzo Kozono,H. Miyadera +7 more
TL;DR: The core level of the C(1s) signal of lithium intercalated graphite was higher than that of graphite, which implies that the carbon in graphite has a negative charge.
Patent
Rare-earth magnet
TL;DR: In this paper, a rare-earth element and fluorine is formed at the grain boundary or near the powder surface of a ferromagnetic material containing at least one kind of rare earth element.
Journal ArticleDOI
Design and performance of 10 Wh rechargeable lithium batteries
Katsunori Nishimura,Hidetoshi Honbo,Seiji Takeuchi,Tatsuo Horiba,Masayuki Oda,Mitsuru Koseki,Yasushi Muranaka,Yuzo Kozono,H. Miyadera +8 more
TL;DR: In this paper, metal-carbon composite anodes were developed by a chemical deposition method of metal particles onto graphite powder, exhibiting a large specific volume capacity of 468-505 Ah/l which may be due to Li Ag alloy formation.
Patent
Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide
TL;DR: In this article, the main current path of a field effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with {1120} plane.
Patent
Fet transistor and fabrication thereof
Hironori Inoue,Daisuke Kawase,Yuzo Kozono,Toshiyuki Ono,Suzuki Takaya,Tsutomu Yao,洋典 井上,勉 八尾,俊之 大野,裕三 小園,大助 川瀬,誉也 鈴木 +11 more
TL;DR: In this paper, an FET transistor employing a hexagonal system silicon carbide as a material, and fabrication method thereof, in which high power conversion capacity is realized by reducing the source-drain leak current when the gate voltage is turned OFF and decreasing the electric resistance when the gating voltage was turned ON.