T
Toshiyuki Sameshima
Researcher at Tokyo University of Agriculture and Technology
Publications - 248
Citations - 3461
Toshiyuki Sameshima is an academic researcher from Tokyo University of Agriculture and Technology. The author has contributed to research in topics: Silicon & Polycrystalline silicon. The author has an hindex of 30, co-authored 244 publications receiving 3353 citations. Previous affiliations of Toshiyuki Sameshima include Dr Emilio B Espinosa Sr Memorial State College of Agriculture and Technology & Shizuoka University.
Papers
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Journal ArticleDOI
XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's
TL;DR: In this article, a polycrystalline silicon thin-film transistors (poly-Si TFT's) with a high carrier mobility were fabricated at low processing temperatures of 150 and 250°C, and they were successfully crystallized at room temperature by multistep irradiation of XeCl-308 nm excimer laser pulses without explosive evaporation of hydrogen.
Journal ArticleDOI
High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing
TL;DR: In this article, a polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270/spl deg/C using laser crystallization, plasma hydrogenation and remote plasma CVD.
Patent
Method of crystallizing a semiconductor thin film
TL;DR: In this article, the laser beam is split into a plurality of secondary laser beams of different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends of the beam with respect to the direction of step feed.
Patent
Plasma system comprising hollow mesh plate electrode
TL;DR: In this paper, a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generator and the mesh plate to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma.
Patent
Method and apparatus for fabricating a thin film semiconductor device
Masaki Hara,Naoki Sano,Toshiyuki Sameshima,Atsushi Kohno,Mitsunobu Sekiya,Yasuhiro Kanaya,Michihisa Yano +6 more
TL;DR: In this paper, a method and an apparatus for fabricating a thin-film semiconductor device is described and an a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film.