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Trupti Ranjan Lenka
Researcher at National Institute of Technology, Silchar
Publications - 160
Citations - 1333
Trupti Ranjan Lenka is an academic researcher from National Institute of Technology, Silchar. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 15, co-authored 132 publications receiving 828 citations. Previous affiliations of Trupti Ranjan Lenka include National Institute of Standards and Technology.
Papers
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Journal ArticleDOI
The dawn of Ga2O3 HEMTs for high power electronics - A review
Rajan Singh,Trupti Ranjan Lenka,Deepak Kumar Panda,Ravi Teja Velpula,Barsha Jain,Ha Quoc Thang Bui,Hieu Pham Trung Nguyen +6 more
TL;DR: In this article, a perspective of Ga2O3 material towards making high electron mobility transistors (HEMTs) for a certain class of RF applications is given, where various defects in WBG devices and their effects on the reliability aspects are also addressed.
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Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
TL;DR: In this paper, the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) are discussed and its effect on various characteristics such as density, C-V characteristics and sheet resistances for different mole fractions are presented.
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Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
Ha Quoc Thang Bui,Ravi Teja Velpula,Barsha Jain,Omar Hamed Aref,Hoang Duy Nguyen,Trupti Ranjan Lenka,Hieu Pham Trung Nguyen +6 more
TL;DR: Full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy demonstrate strong and highly stable white-light emission with high color rendering index.
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High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
Barsha Jain,Ravi Teja Velpula,Ha Quoc Thang Bui,Hoang Duy Nguyen,Trupti Ranjan Lenka,Truong Khang Nguyen,Hieu Pham Trung Nguyen +6 more
TL;DR: A blue-emitting InGaN quantum well is incorporated between the quantum dot active region and the p-GaN, wherein electrons escaping from the device active region can recombine with holes and contribute to white-light emission.
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AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
TL;DR: In this paper, a new gate-recessed AlGaN/GaN-based high electron mobility transistor (HEMT) on SiC substrate is proposed and its DC as well as microwave characteristics are discussed for Si3N4 and SiO2 passivation layers using technology computer aided design (TCAD).