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Trupti Ranjan Lenka
Researcher at National Institute of Technology, Silchar
Publications - 160
Citations - 1333
Trupti Ranjan Lenka is an academic researcher from National Institute of Technology, Silchar. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 15, co-authored 132 publications receiving 828 citations. Previous affiliations of Trupti Ranjan Lenka include National Institute of Standards and Technology.
Papers
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Journal ArticleDOI
Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics
TL;DR: In this paper, the effect of different doping profiles in n++ cap regions using a finite space in access regions on gm and fT with increasing bias was investigated, where the peak electric field in the source access region can be controlled to delay electron velocity saturation.
Proceedings ArticleDOI
Performance analysis and improvement of nanoscale double gate Junctionless transistor based inverter using high-K gate dielectrics
TL;DR: In this paper, an inverter based on three dimensional (3D) double-gate junctionless Nanowire Transistor (JNT) of 20nm gate length is proposed. And extensive mixed mode simulation is performed for the inverter circuit to investigate several inverter characteristics such as voltage transfer characteristics, switching characteristics, inverter gain, Noise Margin.
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A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs
TL;DR: In this article, a novel InxAl1-xN/GaN heterostructure device is proposed by introducing a thin binary layer of strained (In, Al, Ga)-N channel at the heterointerface.
Journal ArticleDOI
Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-K Dielectrics and Gate Metals
TL;DR: In this article, the effects of high-k gate dielectrics and gate metals on linearity characteristics of junctionless transistor are investigated, and it is observed that low work function gate material is suitable to achieve higher linearity in low power applications.
Journal ArticleDOI
Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices
TL;DR: In this article , the defect distribution on the CZTS material and the effects of creating more potential wells with variations in the (S,Se) composition of cZTSSe are explored.