T
Tsutomu Ina
Publications - 6
Citations - 505
Tsutomu Ina is an academic researcher. The author has contributed to research in topics: Trench & Layer (electronics). The author has an hindex of 5, co-authored 6 publications receiving 431 citations.
Papers
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Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TL;DR: In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.
Journal ArticleDOI
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
TL;DR: In this paper, the authors reported the characteristics of vertical GaN-based trench metal-oxide-semiconductor field effect transistors on a free-standing GaN substrate with a blocking voltage of 16 kV.
Proceedings ArticleDOI
Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate
TL;DR: In this article, the authors demonstrate a 1.2 kV-class vertical GaN trench MOSFET with high current and switching operations, achieving a blocking voltage of 1.3 kV by using a field-plate edge termination around an isolation mesa.
Proceedings ArticleDOI
100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer
TL;DR: In this paper, a vertical GaN-based trench MOSFET with a current distribution layer (CDL) in a drift layer is employed for the high current operation.
Patent
Semiconductor device, method of manufacturing the same and power converter
TL;DR: In this paper, the authors proposed a method of manufacturing a semiconductor device by stacking a plurality of metal layers on the semiconductor layer, forming another metal layer that is mainly made of another metal different from a material of an outermost layer among the plurality of other metal layers, on the ohmic electrode, removing the other metal layer from top of the ohm by etching, and processing the Ohm electrode by heat treatment, subsequent to the etching.