Journal ArticleDOI
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
TLDR
In this paper, the authors reported the characteristics of vertical GaN-based trench metal-oxide-semiconductor field effect transistors on a free-standing GaN substrate with a blocking voltage of 16 kV.Abstract:
This paper reports the characteristics of vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate with a blocking voltage of 16 kV The high blocking voltage was obtained by using field plate edge termination around the isolation mesa of the transistor To our knowledge, the blocking voltage is the highest ever reported for vertical GaN-based transistors on free-standing GaN substrates Normally off operation with a threshold voltage of 7 V is also demonstratedread more
Citations
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
Vertical Power p-n Diodes Based on Bulk GaN
TL;DR: In this article, vertical p-n diodes fabricated on pseudobulk low defect density GaN substrates are discussed, with drift layer thicknesses of 6 to 40 µm and net carrier electron concentrations of $4\times 10^{15}$ to $2.5 µm.
Journal ArticleDOI
1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
Hui Nie,Quentin Diduck,Brian Joel Alvarez,Andrew P. Edwards,Brendan M. Kayes,Ming Zhang,Gangfeng Ye,Thomas Prunty,Dave Bour,Isik C. Kizilyalli +9 more
TL;DR: In this paper, vertical GaN transistors fabricated on bulk GaN substrates are discussed and a threshold voltage of 0.5 V and saturation current > 2.3 A are demonstrated.
Journal ArticleDOI
Wide-bandgap semiconductor materials: For their full bloom†
TL;DR: In this paper, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their?full bloom? and other widebandgap materials such as diamond and oxides are attracting focusing interest due to their promising functions especially for power devices.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.
Journal ArticleDOI
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Yu Saitoh,Kazuhide Sumiyoshi,Masaya Okada,Taku Horii,Tomihito Miyazaki,Hiromu Shiomi,Masaki Ueno,Koji Katayama,Makoto Kiyama,Takao Nakamura +9 more
TL;DR: In this article, a high quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements.