There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

Resist underlayer film composition and patterning process using the same

Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method

A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Composition for forming resist underlayer film and pattern-forming method

PROBLEM TO BE SOLVED: To provide a composition for forming a metal oxide-containing film that forms a good pattern by using a metal oxide-containing intermediate film formed of the composition. SOLUTION: The composition for forming a thermosetting metal oxide-containing film comprises (A) a metal oxide-containing compound obtained by hydrolytic condensation of a compound of formula (1) and a compound of formula (2), (B) a compound of formula (3) or (4), (C) an organic acid, and (D) an organic solvent. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1). In the formula, R is an alkyl group; R 1 -R 3 are each H or a monovalent organic group; m1-m3 are each 0 or 1; and m1+m2+m3 is 0-3. U(OR 4 ) m4 (OR 5 ) m5 (2). In the formula, R 4 and R 5 are each an organic group; m4 and m5 are each an integer of at least 0; and U is a group III-V element of the periodic table. L a H b X (3). In the formula, L is Li, Na, K, Rb or Cs; X is a hydroxy group or an organic acid group; a is an integer of at least 1; b is 0 or an integer of at least 1; and a+b is a valence number of the hydroxy group or the organic acid group. M a H b A (4). In the formula, M is sulfonium, iodonium or ammonium; A is X or a non-nucleophilic counterion; a is an integer of at least 1; and b is 0 or an integer of at least 1. COPYRIGHT: (C)2009,JPO&INPIT

Composition for forming metal oxide-containing film, metal oxide-containing film, substrate having metal oxide-containing film formed thereon, and pattern formation method using the same

PROBLEM TO BE SOLVED: To provide an antireflection film material that prevents intermixing in the vicinity of an interface of an antireflection film and a photoresist film and provides a resist pattern with an almost vertical wall profile on the antireflection film and reduces damages in an underlying layer of the antireflection film. SOLUTION: The antireflection film material used for lithography comprises: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200°C or lower; and an organic solvent. COPYRIGHT: (C)2007,JPO&INPIT

Antireflection film material, substrate and patterning process

PROBLEM TO BE SOLVED: To provide an antireflection film material having an excellent antireflection effect on exposure at short wavelengths, having a high etching selection ratio and showing little changes in the film thickness even in long-term storage. SOLUTION: The antireflection film material to be used for lithography comprises: an antireflection silicone resin containing at least an organic group having a carbon-oxygen single bond and/or a carbon-oxygen double bond, a light-absorbing group and silicon atoms having Si-OH and/or Si-OR at an end; an organic solvent containing at least one kind or more of ether bond, carbonyl bond and ester bond in the molecule and having one or more hydroxyl groups; and an acid generating agent. Further, the organic solvent containing at least one kind or more of ether bond, carbonyl bond and ester bond in the molecule and having one or more hydroxyl groups is included by 60 mass% or more of the whole organic solvent. COPYRIGHT: (C)2007,JPO&INPIT

Antireflection film material, substrate having antireflection film and pattern forming method

PROBLEM TO BE SOLVED: To provide a thermosetting silicon-containing film-forming composition enabling good pattern formation of a photoresist film. SOLUTION: The thermosetting silicon-containing film-forming composition comprises (A) a silicon-containing compound obtained through a step for substantially removing an acid catalyst from a reaction mixture obtained by carrying out hydrolytic condensation of a hydrolyzable silicon compound by using a compound selected from an inorganic acid and a sulfonic acid derivative as the acid catalyst, (B) a compound represented by formula (1): L a H b X (wherein L is Li, Na, K, Rb or Cs; X is OH or an organic acid group; a is ≥1, b is 0 or ≥1 and a+b is a valence of a hydroxy group or an organic acid group) or a compound represented by formula (2): MA (wherein M is a sulfonium, iodonium or ammonium; A is non-nucleophilic counter ion), (C) a 1-30C organic acid and (D) an organic solvent. COPYRIGHT: (C)2008,JPO&INPIT

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

A silicon-containing resist underlayer film material for a multilayer resist film used in lithography, which can be suitably used for lithography using a light source with a short wavelength, and has a sufficiently high etching rate with respect to a resist upper layer film, A silicon-containing resist that has a function that the etching rate is sufficiently slow relative to the substrate to be processed and the organic film, and the resist pattern formed on the resist upper layer film can be made vertical, and in particular, the line edge roughness and dimensional uniformity can be improved. An underlayer material is provided. A silicon-containing resist underlayer film material of a multilayer resist film used in lithography, which contains at least a polymer compound composed of repeating units a1 and / or a2 represented by the following general formula (1). A silicon-containing resist underlayer film material. Embedded image [Selection figure] None

Silicon-containing resist underlayer film material and pattern forming method

PROBLEM TO BE SOLVED: To obtain a sacrificial film having improved storage stability, filling property, adhesion and coating film uniformity and having high solubility in a stripping liquid. SOLUTION: A sacrificial film forming composition is used which comprises (A) a cohydrolytic condensation product of hydrolyzable silanes shown by the formula (1): X-Y-SiZ 3 , the formula (2) R n SiZ 4-n and, optionally, the formula (3): P-SiZ 3 , (B) a crosslinking agent, (C) an acid generator, (D) an extender or an organic resin component which is easily degraded and volatilized by heating and (E) an organic solvent. In the formula (1), Z is a hydrolyzable group; X is an organic crosslinkable functional group; and Y is a single bond or a divalent hydrocarbon group. In the formula (2), Z is a hydrolyzable group; R is H or a monovalent hydrocarbon group; and n is an integer of 0-3. In the formula (3), Z is a hydrolyzable group; and P is a substituent which is easily degraded and volatilized by thermal decomposition. COPYRIGHT: (C)2006,JPO&NCIPI

Sacrificial film forming composition, pattern forming method, sacrificial film and method for removing the same

PROBLEM TO BE SOLVED: To provide a silicon-containing film for an etching mask, a silicon-containing film forming composition for an etching mask which can form a film by spin coating, forms a resist film thereon with an excellent resist pattern, and has a high etching selectivity relative to organic films because of its relatively high silicon content, and to provide a substrate processing intermediate and a processed substrate processing method using the same. SOLUTION: The silicon-containing film forming composition for an etching mask is used for an intermediate film in a multilayer resist process for forming in sequence an undercoat film, a silicon-containing film and a photoresist film on a processed substrate, and applying etching in multiple stages, wherein the silicon-containing film forming composition comprises a silicon-containing polymer obtained through hydrolytic condensation of one or a mixture of hydrolyzable silanes including an Si-Si bond-containing silane compound represented by the formula (1): R (6-m) Si 2 X m , wherein R is a monovalent hydrocarbon group; X is alkoxy, alkanoyloxy or halogen; and m is 3-6. COPYRIGHT: (C)2007,JPO&INPIT

Silicon-containing film forming composition for etching mask, silicon-containing film for etching mask, and substrate processing intermediate and processed substrate processing method using the same

Tsutomu Ogiwara

Papers

Antireflection film material, substrate having antireflection film and pattern forming method

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

Silicon-containing resist underlayer film material and pattern forming method

Sacrificial film forming composition, pattern forming method, sacrificial film and method for removing the same

Silicon-containing film forming composition for etching mask, silicon-containing film for etching mask, and substrate processing intermediate and processed substrate processing method using the same