An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

PROBLEM TO BE SOLVED: To provide an antireflection film material having an excellent antireflection effect against exposure at short wavelength, a high etching selection ratio, that is, having a sufficiently fast etching rate with respect to a photoresist film, and having a sufficiently slow etching rate compared to the substrate to be processed, and capable of producing a perpendicular profile of a resist pattern to be formed in the photoresist film on the antireflection film. SOLUTION: The antireflection film material to be used for lithography contains at least a polymer compound having a repeating unit by the copolymerization expressed by general formula (1), or a polymer compound having a repeating unit by the copolymerization expressed by general formula (2) and a polymer compound having a repeating unit by the copolymerization expressed by general formula (3). COPYRIGHT: (C)2005,JPO&NCIPI

Antireflection film material, substrate having antireflection film and method for forming pattern

PROBLEM TO BE SOLVED: To provide an antireflection film material having an excellent antireflection effect on exposure at short wavelengths, having a high etching selection ratio and showing little changes in the film thickness even in long-term storage. SOLUTION: The antireflection film material to be used for lithography comprises: an antireflection silicone resin containing at least an organic group having a carbon-oxygen single bond and/or a carbon-oxygen double bond, a light-absorbing group and silicon atoms having Si-OH and/or Si-OR at an end; an organic solvent containing at least one kind or more of ether bond, carbonyl bond and ester bond in the molecule and having one or more hydroxyl groups; and an acid generating agent. Further, the organic solvent containing at least one kind or more of ether bond, carbonyl bond and ester bond in the molecule and having one or more hydroxyl groups is included by 60 mass% or more of the whole organic solvent. COPYRIGHT: (C)2007,JPO&INPIT

Antireflection film material, substrate having antireflection film and pattern forming method

PROBLEM TO BE SOLVED: To provide a thermosetting silicon-containing film-forming composition enabling good pattern formation of a photoresist film. SOLUTION: The thermosetting silicon-containing film-forming composition comprises (A) a silicon-containing compound obtained through a step for substantially removing an acid catalyst from a reaction mixture obtained by carrying out hydrolytic condensation of a hydrolyzable silicon compound by using a compound selected from an inorganic acid and a sulfonic acid derivative as the acid catalyst, (B) a compound represented by formula (1): L a H b X (wherein L is Li, Na, K, Rb or Cs; X is OH or an organic acid group; a is ≥1, b is 0 or ≥1 and a+b is a valence of a hydroxy group or an organic acid group) or a compound represented by formula (2): MA (wherein M is a sulfonium, iodonium or ammonium; A is non-nucleophilic counter ion), (C) a 1-30C organic acid and (D) an organic solvent. COPYRIGHT: (C)2008,JPO&INPIT

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

PROBLEM TO BE SOLVED: To provide an antireflection film material that prevents intermixing in the vicinity of an interface of an antireflection film and a photoresist film and provides a resist pattern with an almost vertical wall profile on the antireflection film and reduces damages in an underlying layer of the antireflection film. SOLUTION: The antireflection film material used for lithography comprises: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200°C or lower; and an organic solvent. COPYRIGHT: (C)2007,JPO&INPIT

Antireflection film material, substrate and patterning process

PROBLEM TO BE SOLVED: To provide a material of an antireflection film ensuring high etching selectivity to a resist, that is, a high etching speed to a resist, to provide a pattern forming method for forming an antireflection film layer on a substrate using this antireflection film material, and to also provide a pattern forming method using this antireflection film as a hard mask for substrate working. SOLUTION: This antireflection film material comprises (A) a high molecular compound having repeating units by copolymerization represented by formula (1) and/or formula (2), (B) an organic solvent and (C) an acid generator. COPYRIGHT: (C)2005,JPO&NCIPI

元亮岩淵

Papers

Antireflection film material, substrate having antireflection film and method for forming pattern

Antireflection film material, substrate having antireflection film and pattern forming method

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

Antireflection film material, substrate and patterning process

Antireflection film material, antireflection film using the same and pattern forming method

元亮 岩淵

Papers

Antireflection film material, substrate having antireflection film and method for forming pattern

Antireflection film material, substrate having antireflection film and pattern forming method

Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method using the same substrate

Antireflection film material, substrate and patterning process

Antireflection film material, antireflection film using the same and pattern forming method

元亮岩淵