Showing papers by "Ulf Helmersson published in 1989"
TL;DR: In this article, cross-sectional transmission electron microscopy has been used to investigate the effects of low energy (400 eV or less) ion irradiation during the growth of reactively sputtered TiN at temperatures between 300 and 900 °C.
285 citations
TL;DR: In this article, the surface potential changes caused by NH3-derived species adsorbed on the metal grains are assumed to be capacitively coupled to the semiconductor surface through the cracks in the metal film.
50 citations
TL;DR: In this paper, the authors studied the deposition rate of YBa 2 Cu 3 O x compound in ArO 2 gas mixtures and found that the deposition ratio decreased significantly when the oxygen flow exceeded a critical value.
Abstract: Important process parameters affecting the composition and the deposition rate of the YBa 2 Cu 3 O x compound have been studied in detail. Stoichiometric thin films were grown reproducibly from extensively presputtered compound targets. For sputtering in ArO 2 gas mixtures the deposition rate decreased drastically when the oxygen flow exceeded a critical value. Below this critical value all the oxygen was consumed by the deposit and the sputtering process was not significantly affected. The deposition rate and the target potential both decreased as the target current was increased over a specific value. This negative differential impedance of the plasma, which can be explained by outdiffusion of oxygen from the target, did in some cases result in unstable sputtering conditions.
1 citations