Showing papers by "Ulrich L. Rohde published in 1990"
Book•
08 Feb 1990
TL;DR: This paper presents a meta-modelling architecture for two-Tone Intermodulation Products for RF/Microwave Computer-Aided Workstations foor MMIC Requirements and some examples of such products can be found in the literature on this topic.
Abstract: Foreword by David Leeson. Preface. 1. RF/Microwave Systems. 2. Lumped and Distributed Elements. 3. Active Devices. 4. Two-Port Networks. 5. Impedance Matching. 6. Microwave Filters. 7. Noise in Linear Two-Ports. 8. Small- and Large-Signal Amplifier Design. 9. Power Amplifier Design. 10. Oscillator Design. 11. Microwave Mixer Design. 12. RF Switches and Attenuators. 13. Microwave Computer-Aided Workstations foor MMIC Requirements. Appendix A: BIP: Gummel-Poon Bipolar Transistor Model. Appendix B: Level 3 MOSFET. Appendix C: Noise Parameters of GaAs MESFETs. Appendix D: Derivations for Unilateral Gain Section. Appendix E: Vector Representation of Two-Tone Intermodulation Products. Appendix F: Passive Microwave Elements. Index.
577 citations
01 Jan 1990
TL;DR: In this article, Leeson presented a model of Gummel-Poon Bipolar Transistor Model for MMIC requirements and proposed a two-port network with linear two-ports.
Abstract: Foreword by David Leeson. Preface. 1. RF/Microwave Systems. 2. Lumped and Distributed Elements. 3. Active Devices. 4. Two-Port Networks. 5. Impedance Matching. 6. Microwave Filters. 7. Noise in Linear Two-Ports. 8. Small- and Large-Signal Amplifier Design. 9. Power Amplifier Design. 10. Oscillator Design. 11. Microwave Mixer Design. 12. RF Switches and Attenuators. 13. Microwave Computer-Aided Workstations foor MMIC Requirements. Appendix A: BIP: Gummel-Poon Bipolar Transistor Model. Appendix B: Level 3 MOSFET. Appendix C: Noise Parameters of GaAs MESFETs. Appendix D: Derivations for Unilateral Gain Section. Appendix E: Vector Representation of Two-Tone Intermodulation Products. Appendix F: Passive Microwave Elements. Index.
383 citations