We discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics It is revealed that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices

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Quantum well lasers--Gain, spectra, dynamics

We propose a novel structure for electron wave devices that utilizes the mutual coupling effect between electron wave guides. The structure consists of two parallel electron wave guides with a coupling region controlled by a gate voltage. Using simple theoretical calculations, we estimate the switching time and the coupling length required for electron transfer to be 2 ps and 0.28 μm, respectively.

Proposal of novel electron wave coupled devices

Optical spectra near the band edges of AlxGa1−xAs/GaAs coupled quantum well structures are found to exhibit rich structure. Under the Stark perturbation, these transitions have behavior remarkably different from those associated with single quantum wells. Positive energy shifts and high sensitivity to electric fields have been observed and interpreted as evidence of well coupling. Results of a simple numerical calculation support this interpretation.

Stark effect in AlxGa1−xAs/GaAs coupled quantum wells

Semiconductor quantum wells (QWs) have been shown to be important for application to electrooptic (EO) modulators.1 Single QWs, however, are structurally too simple for engineering electroabsorption properties, such as large modulation depth with small applied fields.

Stark effect in AlxGa1-xAs/GaAs coupled quantum wells

Second‐order susceptibility of AlxGa1−xAs/GaAs asymmetric coupled quantum well is calculated. The magnitudes of second‐harmonic and linear electro‐optic coefficients are found to be comparable to that of LiNbO3. Further progress can lead to engineering of novel synthetic nonlinear materials.

Second‐order susceptibility of asymmetric coupled quantum well structures

A formalism is developed which results in simple analytic expressions for the electron energy splittings and the wave functions in coupled quantum well structures of the type employed in new laser and transistor configurations. The limits of validity of the formalism are explored.

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Uri Sivan

Papers

Approximate analytic solution for electronic wave functions and energies in coupled quantum wells